Light emitting device package and light source device

ABSTRACT

A light emitting device package including first and second frames spaced apart from each other; a body disposed between the first and second frames, the body including a cavity having a side surface; and a light emitting device disposed in the cavity. Further, the side surface of the cavity includes a first side portion spaced from the light emitting device and disposed around the light emitting device, a groove portion disposed around the first side portion, and a second side portion disposed around the groove portion.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

This application is a Divisional application of U.S. application Ser.No. 16/643,099, filed on Feb. 28, 2020, which is the U.S. National StageApplication under 35 U.S.C. § 371 of PCT Application No.PCT/KR2018/010113, filed on Aug. 31, 2018, which claims priority toKorean Patent Application Nos. 10-2017-0112124, filed on Sep. 1, 2017and 10-2017-0116588, filed on Sep. 12, 2017, whose entire disclosuresare hereby incorporated by reference.

TECHNICAL FIELD

The embodiment relates to a light emitting device package, asemiconductor device package, a method of manufacturing a semiconductordevice package, and a light source device.

BACKGROUND ART

A semiconductor device including a compound such as GaN, AlGaN and thelike may have many merits such as wide and easily adjustable band gapenergy, so that the semiconductor device may be used variously as alight emitting device, a light receiving device, various diodes, and thelike.

Specifically, as thin film growth technology and device materials havebeen developed, a light emitting device, such as a light emitting diodeor a laser diode, using a Group III-V or II-VI compound semiconductingmaterial has an advantage capable of realizing light of variouswavelength bands such as red, green, blue, and ultraviolet light. Inaddition, a light emitting device, such as a light emitting diode or alaser diode, using a Group III-V or II-VI compound semiconductingmaterial may realize a white light source with high efficiency by usinga fluorescent material or by combining colors. Such a light emittingdevice has advantages of low power consumption, semi-permanent lifetime,a fast response speed, safety, and environmental friendliness ascompared with a conventional light source such as a fluorescent lamp, anincandescent lamps, or the like.

In addition, when a light-receiving device such as a photodetector or asolar cell is fabricated by using a Group III-V or Group II-VI compoundsemiconductor material, since the material of the device material hasbeen developed, light in various wavelength ranges is absorbed togenerate optical current, so that light of various wavelength rangesfrom gamma rays to radio wavelength regions may be used. Further, such alight receiving device may have advantages of a fast response speed,safety, environmental friendliness and easy control of device materials,so that the light receiving device may be easily used for a powercontrol, a microwave circuit or a communication module.

Therefore, the application of the semiconductor device is expanded to atransmitting module of an optical communication transmitting module, alight emitting diode backlight serving as a substitute for a coldcathode fluorescence lamp (CCFL) constituting a backlight of a liquidcrystal display (LCD), a white light emitting diode lighting deviceserving as a substitute for a fluorescent lamp or an incandescent lamp,a vehicle headlight, a signal lamp and a sensor for detecting gas orfire. In addition, the application of the semiconductor device may beexpanded to a high-frequency application circuit, other power controldevices, and a communication module.

A light emitting device may serve as a p-n junction diode having acharacteristic of converting electric energy into light energy by usinggroup III-V or II-VI elements of the periodic table, and may providevarious wavelengths by controlling the composition ratio of compoundsemiconductors.

For instance, a nitride semiconductor represents superior thermalstability and wide band gap energy so that the nitride semiconductor hasbeen spotlighted in the field of optical devices and high-powerelectronic devices. In particular, blue, green, and UV light emittingdevices employing the nitride semiconductor have already beencommercialized and extensively used.

For example, an ultraviolet light emitting device may be used as a lightemitting diode that emits light distributed in a wavelength range of 200nm to 400 nm, used for sterilization and purification in the case of ashort wavelength in the wavelength band, and used for an exposuremachine, a curing machine, or the like in the case of a long wavelength.

Ultraviolet rays may be divided into three groups of UV-A (315 nm to 400nm), UV-B (280 nm to 315 nm) and UV-C (200 nm to 280 nm) in the order oflong wavelength. The UV-A (315 nm to 400 nm) has been applied to variousfields such as UV curing for industrial use, curing of printing ink, anexposure machine, discrimination of counterfeit, photocatalyticdisinfection, special illumination (aquarium/agriculture and the like),the UV-B (280 nm to 315 nm) has been used for medical use, and the UV-C(200 nm to 280 nm) has been applied to air purification, waterpurification, sterilization products, and the like.

Meanwhile, as a semiconductor device capable of providing a high outputhas been requested, a semiconductor device capable of increasing anoutput by applying a high power source has been studied.

In addition, research on a method for improving the light extractionefficiency of a semiconductor device and enhancing the luminousintensity in a package stage in a semiconductor device package has beenstudied. Further, in the semiconductor device package, studies on amethod of enhancing the bonding strength between the package electrodeand the semiconductor device have been performed.

In addition, in the semiconductor device package, studies on a methodfor reducing the manufacturing cost and improving the manufacturingyield by improving the process efficiency and changing the structurehave been performed.

SUMMARY

An embodiment may provide a light emitting device package including aprotruding portion to a frame facing each bonding portion of the lightemitting device and/or an upper recess around the frame.

An embodiment provides a light emitting device package, a semiconductordevice package, and a method of manufacturing the same, which provide aprotruding portion of a frame facing each bonding portion of the lightemitting device and may be disposed a conductive layer around a bottomof the protruding portion.

An embodiment provides a light emitting device package, a semiconductordevice package, and a method of manufacturing the same, which provide aconductive layer around a protruding portion of a frame facing eachbonding portion of the light emitting device and wherein the conductivelayer may be covered with a resin.

An embodiment provides a light emitting device package, a semiconductordevice package, a lighting module, and a method of manufacturing thesame, which provide a flat portion of a frame facing each bondingportion of a semiconductor device and may be disposed different resinsaround the flat portion.

An embodiment provides a light emitting device package, a semiconductordevice package, a lighting module, and a manufacturing method the same,which may be disposed resins having different reflection propertiesaround a flat portion of a frame facing each bonding portion of asemiconductor device.

An embodiment provides a light emitting device package, a semiconductordevice package, a lighting module, and a manufacturing method the same,which provides an upper recess around a flat portion of frames facingeach bonding portion of a semiconductor device and may be disposed resinportions having different reflection properties in the upper recess.

An embodiment provides a light emitting device package, a semiconductordevice package, and a method of manufacturing the same so that aprotection device may be embedded in any one of resins disposed around aflat portion of a frame.

An embodiment may provide a semiconductor device package, a method ofmanufacturing a semiconductor device package, and a light source devicecapable of improving light extraction efficiency and electricalproperties.

An embodiment may provide a semiconductor device package, a method ofmanufacturing a semiconductor device package, and a light source devicecapable of improving process efficiency and providing a new packagestructure to reduce manufacturing cost and improve manufacturing yield.

An embodiment may provide a semiconductor device package and a method ofmanufacturing a semiconductor device package that may prevent re-meltingfrom occurring in a bonding region of the semiconductor device packagewhile the semiconductor device package is re-bonded to a circuit boardor the like.

The light emitting device package according to the embodiment maycomprise: first and second frames spaced apart from each other; a bodydisposed between the first and second frames; a light emitting deviceincluding a first bonding portion and a second bonding portion on alower portion thereof; and a first resin disposed between the body andthe light emitting device, wherein the first frame includes a firstprotruding portion facing the first bonding portion of the lightemitting device. And a second protruding portion facing the secondbonding portion, and comprising a first conductive layer between thefirst bonding portion and the first protruding portion, and a secondconductive layer between the second bonding portion and the secondprotruding portion.

According to the embodiments, the first and second protruding portionsmay have a flat surface in which an upper region facing the first andsecond bonding portions is a horizontal plane, and the first and secondprotruding portions may have an inclined side or a curved surface aroundthe upper region.

According to an embodiment, a width of a first direction of the upperregion in the first protruding portion may be smaller than a length of asecond direction, and the first direction is a direction in which animaginary line passing through a center of the first and secondprotruding portions extends. The second direction may be a directionorthogonal to the first direction.

According to an embodiment, a distance between the body and the upperregions of the first and second protruding portions may be equal to awidth of the first direction of the upper regions of the first andsecond protruding portions.

According to an embodiment, the width of the first direction in theupper regions of the first and second protruding portions may be equalto a thickness of the first and second frames.

According to an embodiment, the first and second frames may have concaveportions on opposite sides of the first and second protruding portions,and a heights of the first and second protruding portions may be equalto a depth of the concave portions.

According to an embodiment, a resin portion may be included on the body,the first and second frames, and the resin portion may contact the firstand second conductive layers.

According to an embodiment, a first resin may be disposed between thebody and the light emitting device, and the first resin may contact thefirst and second conductive layers.

According to an embodiment, at least one of the body and the first andsecond frames may include a recess or an opening.

According to an embodiment, an area of a lower surface of the first andsecond bonding portions may be larger than an area of an upper region ofthe first and second protruding portions.

According to an embodiment, a thickness of the first resin may begreater than a height of the first and second protruding portions.

According to an embodiment, the thickness of the first and second framesmay range from 120 to 300 micrometers.

An light emitting device package according to the embodiment maycomprise: first and second frames spaced apart from each other; a bodydisposed between the first and second frames, the body including acavity having a bottom and a side surface; a light emitting devicedisposed in the cavity; a first resin between the light emitting deviceand the body; and a protection device disposed on the first frame,wherein a side surface of the cavity includes a first side portionspaced apart from the light emitting device and disposed around thelight emitting device, a groove portion disposed around the first sideportion, and the a second side portion disposed around the grooveportion, wherein a bottom surface of the groove portion includes a firstregion in which a portion of the first frame is exposed, and theprotection device is disposed in the first region, and the grooveportion may include a second resin having a reflective material.

According to an embodiment, the light emitting device may include firstand second bonding portions disposed on the first and second frames, andthe first frame may include a first flat portion facing the firstbonding portion and a first upper recess around the first flat portion,and the second frame may include a second flat portion facing the secondbonding portion and a second upper recess around the second flatportion.

According to an embodiment, the first side portion may be continuouslyconnected along the first and second upper recesses, and the secondresin may be continuously connected to an outer periphery of the firstside portion.

According to an embodiment, the first side portion may be continuouslyconnected or discontinuously disposed along the first and second upperrecesses. According to an embodiment, the second resin may have areflectance higher than that of the first side portion.

According to an embodiment, the first frame may include first and secondportions facing each other on both sides of the first upper recess, andthe second frame include a third and fourth regions facing each other onboth sides of the second upper recess. The protection device maydisposed on any one of the first to fourth regions. According to anembodiment, the second resin may be disposed on the protection device.

According to an embodiment, the body may have a thickness of a regiondisposed between the first and second upper recesses thinner than athickness of a region disposed between the first and second flatportions. According to an embodiment, the first side portion may beformed of the same material as the body. According to an embodiment, theupper surface of the first side portion may have a larger inclinationangle than an inclination angle of the upper surface of the secondresin.

According to an embodiment, a concave recess or/and a through hole isdisposed in the body disposed between the first and second flatportions, and a first resin may be disposed in the recess or the throughhole and may be in contact with the light emitting device.

According to an embodiment, a reflective portion may be included aroundthe second resin, and the reflective portion may include a cavity thatan upper portion is open, and the light emitting device may be disposedin the cavity. According to an embodiment, the reflective portion may beformed of the same material as the body and the first side portion, anda molding portion may be disposed in the cavity.

Lighting module according to the embodiment may include a circuit board;and the light emitting device package on the circuit board.

Advantageous Effects

According to the semiconductor device package and the semiconductordevice package manufacturing method according to the embodiment, thereis an advantage that may improve the light extraction efficiency,electrical properties and reliability.

According to the semiconductor device package and the semiconductordevice package manufacturing method according to the embodiment, thereis an advantage that may improve the process efficiency and reduce themanufacturing cost and improve the manufacturing yield by providing anew package structure.

A semiconductor device package according to the embodiment may provide abody having a high reflectance, thereby preventing the reflectiveportion from being discolored, thereby improving the reliability of thesemiconductor device package.

According to the embodiment, the protection device disposed outside thelight emitting device may be embedded in the resin, thereby reducing thelight loss.

According to the embodiment, a white silicon may be separated from thelight emitting device to reduce the light loss.

According to the semiconductor device package and the semiconductordevice manufacturing method according to the embodiment, the re-meltingphenomenon may be prevented from occurring in the bonding region of thesemiconductor device package while the semiconductor device package isre-bonded to the circuit board, etc.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a light emitting device package according to afirst embodiment of the invention.

FIG. 2 is a front view of the light emitting device package of FIG. 1.

FIG. 3 is a bottom view of the light emitting device package of FIG. 1.

FIG. 4 is a cross-sectional view taken along line B-B of the lightemitting device package shown in FIG. 1.

FIG. 5 is an enlarged view of a portion where the light emitting deviceof FIG. 4 is disposed.

FIG. 6 is a cross-sectional view taken along the line C-C of the lightemitting device package shown in FIG. 1.

FIG. 7 is a plan view showing a modification of the body of the lightemitting device package of FIG. 1.

FIG. 8 is a cross-sectional view taken along line E-E of the lightemitting device package of FIG. 7.

FIG. 9 is another example of the light emitting device package of FIG.7.

FIG. 10 is a view showing a modification of the frame in the lightemitting device package of FIG. 7.

FIG. 11 is an example of a light emitting device package having themodified frame of FIG. 10.

FIGS. 12 to 14 are views illustrating a manufacturing process of a lightemitting device package according to a first embodiment of theinvention.

FIG. 15 is a plan view of a light emitting device package according to asecond embodiment of the present invention.

FIG. 16 is a view illustrating a bottom of the cavity in FIG. 15.

FIG. 17 is a bottom view of the light emitting device package of FIG.15.

FIG. 18 is a cross-sectional view taken along the line A-A of the lightemitting device package shown in FIG. 15.

FIG. 19 is a cross-sectional view taken along line A1-A1 of the lightemitting device package shown in FIG. 15.

FIG. 20 is a cross-sectional view taken along line A2-A2 of the lightemitting device package shown in FIG. 15.

FIG. 21 is an enlarged view of a portion where the light emitting deviceof FIG. 18 is disposed.

FIG. 22 is a view illustrating a first modified example of the firstside of the light emitting device package of FIG. 15.

FIG. 23 is a view illustrating a second modified example of the firstside of the light emitting device package of FIG. 15.

FIG. 24 is a first modified example of the light emitting device packageof FIG. 15.

FIG. 25 is a second modified example of the light emitting devicepackage of FIG. 15.

FIGS. 26 to 29 are views illustrating a method of manufacturing thelight emitting device package of FIG. 15.

FIG. 30 is an example of a light emitting module having the lightemitting device package of FIG. 15.

FIG. 31 is a plan view illustrating an example of a light emittingdevice applied to a light emitting device package according to anembodiment (s) of the present invention.

FIG. 32 is a cross-sectional view taken along line F-F of the lightemitting device of FIG. 31.

DETAILED DESCRIPTION

Hereinafter, an embodiment will be described with reference toaccompanying drawings. In the description of the embodiments, it will beunderstood that, when a layer (or film), a region, a pattern, or astructure is referred to as being “on” or “under” another substrate,another layer (or film), another region, another pad, or anotherpattern, it may be “directly” or “indirectly” over the other substrate,layer (or film), region, pad, or pattern, or one or more interveninglayers may also be present. Such a position of the layer has beendescribed with reference to the drawings, but the embodiments are notlimited thereto.

Hereinafter, a semiconductor device package according to an embodimentof the invention will be described in detail with reference to theaccompanying drawings. In the device package, the device may be a lightemitting device that emits light of ultraviolet, infrared, or visiblelight, a non-light emitting device, a sensing device that senseswavelength or heat, or a protection device such as a Zener diode.Hereinafter, an example of a device is described as an example of alight emitting device, and may be defined as a package, a module, or alight source device to which the device is applied.

First Embodiment

A light emitting device package according to a first embodiment of thepresent invention will be described with reference to FIGS. 1 to 6. FIG.1 is a plan view of a light emitting device package according to a firstembodiment of the present invention, FIG. 2 is a front view of the lightemitting device package of FIG. 1, FIG. 3 is a bottom view of the lightemitting device package of FIG. 1, FIG. 4 is a cross-sectional viewtaken along line B-B of the light emitting device package shown in FIG.1, FIG. 5 is an enlarged view of a portion where the light emittingdevice of FIG. 4 is disposed, and FIG. 6 is a cross-sectional view takenalong the line C-C of the light emitting device package shown in FIG. 1.

Referring to FIGS. 1 to 6, the light emitting device package 100according to the embodiment may include a package body 110 and a lightemitting device 120.

The package body 110 may include a plurality of frames, for example, afirst frame 111 and a second frame 112. The first frame 111 and thesecond frame 112 may be spaced apart from each other in the firstdirection X. The package body 110 may include a body 113. The body 113may be disposed between the first frame 111 and the second frame 112.The body 113 may perform a function of a kind of electrode separationline. The body 113 may be referred to as an insulating member. The body113 may be in contact with the first frame 111 and the second frame 112.

The body 113 may be disposed on the first frame 111. The body 113 may bedisposed on the second frame 112. The body 113 may provide an inclinedsurface disposed on the first frame 111 and the second frame 112. Acavity 102 may be provided on the first frame 111 and the second frame112 by the inclined surface of the body 113. According to an embodiment,the package body 110 may be provided in a structure having the cavity102, or may be provided in a structure having a flat top surface withoutthe cavity 102. The package body 110 may provide a reflective portion110A having the cavity 102. The reflective portion 110A may cover thecircumference of the cavity 102 and be coupled to the body 110.

The light emitting device package 100 may have a length in the firstdirection X equal to or greater than a length in the second direction Y.When the length of the first direction X is longer than the length ofthe second direction Y, the length of the first direction X in thepackage body 110 may have a length of 1.5 times or more than the lengthof the Y direction. The length of the Y direction may be in the range of2 mm or more, for example, 2 mm to 4 mm. The first direction may be an Xdirection, the second direction may be a Y direction orthogonal to the Xdirection, and a third direction may be a height or thickness directionas a direction orthogonal to the X and Y directions.

Here, when the light emitting device 120 has a polygonal shape, thefirst direction may be a direction of a longer side of the sides of thelight emitting device 120 or a direction in which the bonding portionsare spaced apart from each other. For example, the first direction maybe a long side direction of the light emitting device 120, and thesecond direction may be a short side direction. Alternatively, when thelight emitting device 120 has a square shape, the lengths of the sidesof the first direction and the second direction may be the same. Bothshort sides of the light emitting device 120 may be disposed opposite toeach other in the first direction, and both long sides of the lightemitting device 120 may be disposed opposite to each other in the seconddirection.

The package body 110 or the body 113 includes first and second sidesurfaces Sa and Sb disposed in the first direction, and third and fourthside surfaces Sc and Sd disposed in the second direction. The first andsecond side surfaces Sa and Sb may face each other with respect to thefirst direction of the package body 110. The third and fourth sidesurfaces Sc and Sd may face each other with respect to the seconddirection of the package body 110. An interval between the first andsecond side surfaces Sa and Sb may be a length in the first direction ofthe third and fourth side surfaces Sc and Sd. An interval between thethird and fourth side surfaces Sc and Sd may be a length in the seconddirection of the first and second side surfaces Sa and Sb. Each sidesurface Sa, Sb, Sc, and Sd of the package body 110 may be a verticalsurface or an inclined surface. Each side surface Sa, Sb, Sc, and Sd ofthe package body 110 may be each side surface of the reflective portion110A.

For example, the body 113 may be made of at least one selected from thegroup consisting of Polyphthalamide (PPA), Polychloro triphenyl (PCT),liquid crystal polymer (LCP), polyamide 9T (PA9T), silicon, epoxymolding compound (EMC), silicon molding compound (SMC), ceramic, photosensitive glass (PSG), sapphire (Al2O3) and the like. The body 113 mayinclude high refractive fillers such as TiO2 and SiO2. The reflectiveportion 110A may be made of the same material as the body 113. Asanother example, the reflective portion 110A may be made of a materialdifferent from that of the body 113.

The body 113 may include the cavity 102. The cavity 102 may include abottom surface and a side surface, and the side surface of the cavity102 may be disposed around the bottom surface of the cavity 102. Thelight emitting device 120 may be disposed on the bottom surface of thecavity 102.

The first frame 111 and the second frame 112 may be provided as aconductive frame. The first frame 111 and the second frame 112 maystably provide structural strength of the package body 110, and may beelectrically connected to the light emitting device 120. A firstextension portion 111A of the first frame 111 may extend in the firstside direction of the package body 110 and may protrude toward the firstside surface Sa. A second extension portion 112A of the second frame 112may extend in the second side direction of the package body 110 and mayprotrude to the second side surface Sb. The first and second sidesurfaces Sa and Sb of the package body 110 may be opposite to eachother. As another example, the first frame 111 and the second frame 112may be provided as an insulating frame. The first frame 111 and thesecond frame 112 may stably provide structural strength of the packagebody 110.

In example embodiments, the light emitting device 120 may include afirst bonding portion 121, a second bonding portion 122, and asemiconductor layer 123. The light emitting device 120 may include asubstrate 124. The light emitting device 120 may have a length in thefirst direction longer than a length in the second direction. The firstdirection may be a direction in which the first bonding portion 121 andthe second bonding portion 122 overlap each other.

The semiconductor layer 123 may include a first conductive semiconductorlayer, a second conductive semiconductor layer, and an active layerdisposed between the first conductive semiconductor layer and the secondconductive semiconductor layer. The first bonding portion 121 may beelectrically connected to the first conductive semiconductor layer. Inaddition, the second bonding portion 122 may be electrically connectedto the second conductive semiconductor layer.

The substrate 124 may include a light transmitting layer, and may beformed of an insulating material or a semiconductor material. Thesubstrate 124 may be selected from a group including, for example,sapphire substrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.For example, an uneven pattern may be formed on a surface of thesubstrate 124.

According to an embodiment, the semiconductor layer 123 may be providedas a compound semiconductor. The semiconductor layer 123 may be providedas a group II-VI or group III-V compound semiconductor. For example, thesemiconductor layer 123 may include at least two elements selected fromaluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As),and nitrogen (N).

The semiconductor layer 123 may include a first conductive semiconductorlayer, an active layer, and a second conductive semiconductor layer. Thefirst and second conductive semiconductor layers may be implemented asat least one of a compound semiconductor of Group II-VI or Group III-V.The first and second conductive semiconductor layers may be formed of,for example, a semiconductor material having a composition formula ofInxAlyGa1-x-yN (0≤x≤≤1, 0≤y≤1, 0≤x+y≤1). For example, the first andsecond conductive semiconductor layers may include at least one selectedfrom the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductivesemiconductor layer may be an n-type semiconductor layer doped withn-type dopants of Si, Ge, Sn, Se, and Te. The second conductivesemiconductor layer may be a p-type semiconductor layer doped withp-type dopants of Mg, Zn, Ca, Sr, and Ba.

The active layer may be implemented with a compound semiconductor. Theactive layer may be implemented as at least one of a compoundsemiconductor of Group II-VI or Group III-V. When the active layer isimplemented as a multi-well structure, the active layer may include aplurality of well layers and a plurality of barrier layers that arealternately arranged, and may disposed of a semiconductor materialhaving a composition formula of InxAlyGa1-x-yN (0≤x≤≤1, 0≤y≤1, 0≤x+y≤1).For example, the active layer may include at least one selected from thegroup comprising InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN,InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, andInP/GaAs.

The light emitting device 120 may be disposed on the package body 110.The light emitting device 120 may be disposed on the first frame 111 andthe second frame 112. The light emitting device 120 may be disposed onthe body 113. The light emitting device 120 may overlap the body 113 ina vertical direction. The light emitting device 120 may be disposed inthe cavity 102 provided by the package body 110. The cavity 102 may beformed by the reflective portion 110A of the package body 110.

The first bonding portion 121 and the second bonding portion 122 may bespaced apart from each other on the lower surface of the light emittingdevice 120. The first bonding portion 121 may be disposed on the firstframe 111. The second bonding portion 122 may be disposed on the secondframe 112. The first and second bonding portions 121 and 122 may beelectrodes or pads.

The first bonding portion 121 may be disposed between the semiconductorlayer 123 and the first frame 111. The second bonding portion 122 may bedisposed between the semiconductor layer 123 and the second frame 112.The first bonding portion 121 and the second bonding portion 122 may beformed in a single layer or multiple layers using one or more materialsor alloys of Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Agalloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au,and Ni/IrOx/Au/ITO.

The first bonding portion 121 may overlap the first frame 111 in thevertical direction. The first bonding portion 121 may be electricallyconnected to the first frame 111. The second bonding portion 122 mayoverlap the second frame 112 in the vertical direction. The firstbonding portion 121 may be electrically connected to the second frame112.

Referring to FIGS. 1 to 3, the light emitting device package 100according to the embodiment may include a first protruding portion P1and a second protruding portion P2. The first frame 111 may include thefirst protruding portion P1. The second frame 112 may include the secondprotruding portion P2. The first protruding portion P1 and the secondprotruding portion P2 may protrude from the bottom surface of the cavity102 toward a direction of the upper surface of the reflective portion110A or the upper direction of the cavity 102.

The light emitting device package 100 according to the embodiment iselectrically connected to the first bonding portion 121 through thefirst protruding portion P1, and is electrically connected to the secondbonding portion 122 through the second protruding portion P2.Accordingly, the light emitting device 120 may be driven by drivingpower supplied through the first bonding portion 121 and the secondbonding portion 122. In addition, the light emitted from the lightemitting device 120 may be provided in an upper direction of the packagebody 110.

The first protruding portion P1 may be disposed in the first frame 111.The first protruding portion P1 may protrude from the first frame 111.The first protruding portion P1 may have a structure in which a portionof the upper surface of the first frame 111 protrudes. The firstprotruding portion P1 may be a region in which a part of the first frame111 protrudes in the vertical direction. The first protruding portion P1may protrude from the upper and lower surfaces of the first frame 111 inthe vertical direction Z. The first protruding portion P1 may be formedof the same material as the first frame 111. A region corresponding tothe first protruding portion P1 among the lower portions of the firstframe 111 may include a first concave portion P10. The protruding heightd of the first protruding portion P1 may be equal to a depth e of thefirst concave portion P10.

Referring to FIGS. 2, 5 and 6, the first protruding portion P1 may havea greater length b1 (b1>b) in the second direction Y than a width b ofthe first direction X. The first direction may be a horizontaldirection, a long side direction of the package body 110, or a directionin which the two frames 111 and 112 are spaced apart from each other.The second direction may be a longitudinal direction, a short sidedirection of the package body 110, or a direction in which the body 113between the two frames 111 and 112 extends. The second protrudingportion P2 may have a greater length b1 (b1>b) in the second direction Ythan a width b of the first direction X. The first direction may be ahorizontal direction, a long side direction of the package body 110, ora direction in which the two frames 111 and 112 are spaced apart fromeach other. The first direction may be a direction in which virtuallines connecting the centers of the first and second protruding portionsP1 and P2 extend.

The first protruding portion P1 may be disposed under the first bondingportion 121 of the light emitting device 120. The first protrudingportion P1 may overlap the first bonding portion 121 of the lightemitting device 120 in a third direction. The first protruding portionP1 may overlap the first bonding portion 121 of the light emittingdevice 120 in a third direction from the upper surface of the firstframe 111 to the lower surface.

Referring to FIGS. 2 and 3, the second protruding portion P2 may bedisposed in the second frame 112. The second protruding portion P2 mayprotrude from the second frame 112. The second protruding portion P2 mayhave a structure in which a portion of the upper surface of the secondframe 112 protrudes. The second protruding portion P2 may be a region inwhich a part of the second frame 112 protrudes in the verticaldirection. The second protruding portion P2 may protrude from the upperand bottom surfaces of the second frame 112 in the third direction. Thesecond protruding portion P2 may be formed of the same material as thesecond frame 112. A region corresponding to the second protrudingportion P2 among the lower portions of the second frame 112 may includea second concave portion P20. The protruding height of the secondprotruding portion P2 may be equal to a depth e of the second concaveportion P20.

The first concave portion P10 may be a region overlapping with the firstprotruding portion P1 in a vertical direction of the flat lower surfaceof the first frame 111. The second concave portion P20 may be an areaoverlapping the second convex portion P2 in the vertical direction ofthe flat lower surface of the second frame 112.

The first and second concave portions P10 and P20 are concave in thethird direction from the lower surfaces of the first and second frames111 and 112 toward the upper surfaces of the first and second frames 111and 112. The first and second concave portions P10 and P20 may overlapthe protruding portions 111 and 112 in the third direction, and may havethe same depth as the height of the first and second protruding portions111.

A first conductive layer 127 may be disposed between the first frame 111and the first bonding portion 121 of the light emitting device 120. Asecond conductive layer 129 may be disposed between the second frame 112and the second bonding portion 122 of the light emitting device 120. Thefirst conductive layer 127 may be bonded between the first protrudingportion P1 of the first frame 111 and the first bonding portion 121. Thesecond conductive layer 129 may be bonded between the second protrudingportion P2 and the second bonding portion 122 of the second frame 112.The first conductive layer 127 may overlap the first protruding portionP1 and the first bonding portion 121 of the first frame 111 in thevertical direction. The second conductive layer 129 may overlap thesecond protruding portion P2 and the second bonding portion 122 of thesecond frame 112 in the vertical direction.

The first and second conductive layers 127 and 129 may be bonded to thefirst and second bonding portions 121 and 122 in the upper regions ofthe first and second protruding portions P1 and P2. A portion of thefirst and second conductive layers 127 and 129 may be disposed around alower portion of the first and second protruding portions P1 and P2.

The first and second conductive layers 127 and 129 may include onematerial or alloy selected from the group consisting of Ag, Au, Pt, Sn,Cu, or an alloy thereof. At least one of the protruding portions P1 andP2 and the bonding portions 121 and 122 of each of the frames 111 and112 may be formed by combining a material constituting formed thereinwith the materials of the first and second conductive layers 127 and 129to be compounded by an intermetallic compound layer. The intermetalliccompound may include at least one of CuxSny, AgxSny, and AuxSny, and maysatisfy a condition of 0<x<1, y=1-x, and x>y.

The intermetallic compound (IMC) layer may be formed between the bondingportions 121 and 122 of the light emitting device 120, the conductivelayers 127 and 129 and the frames 111 and 112 by form of a materialconstituting the conductive layers 127 and 129 and the conductive layers127 and 129, or a heat treatment process after the conductive layers 127and 129 are provided. For example, the conductive layers 127 and 129 maybe formed using a conductive paste. The conductive paste may include asolder paste, a silver paste, or the like, and may include a multilayercomposed of different materials, or a single layer or multilayercomposed of an alloy. For example, the conductive layers 127 and 129 mayinclude an SAC (Sn—Ag—Cu) material.

For example, an alloy layer may be formed by bonding between a materialconstituting the conductive layers 127 and 129 and a metal of the frames111 and 112. Accordingly, the conductive layers 127 and 129 and theframes 111 and 112 may be physically and electrically coupled to eachother stably. The conductive layers 127 and 129, the alloy layer and theframe may be physically and electrically stably combined. The alloylayer may include at least one intermetallic compound layer selectedfrom the group including AgSn, CuSn, AuSn, and the like. Theintermetallic compound layer may be formed by combining a first materialand a second material, the first material may be provided from theconductive layers 127 and 129, and the second material may be providedfrom the bonding portions 121 and 122 or the frames 111 and 112.

The light emitting device package 100 may be mounted on a sub-mount or acircuit board. However, in the conventional light emitting devicepackage is mounted on the sub-mount or the circuit board, a hightemperature process such as a reflow may be applied. At this time, inthe reflow process, a re-melting phenomenon occurs in the bonding regionbetween the lead frame and the light emitting device provided in thelight emitting device package, thereby weakening the stability of theelectrical connection and the physical coupling.

The first bonding portion 121 and the second bonding portion 122 of thelight emitting device according to the embodiment may receive drivingpower through the protruding portions P1 and P2 and the conductivelayers 127 and 129. In addition, the melting points of the conductivelayers 127 and 129 may be selected to have a higher value than themelting points of other bonding materials. Therefore, when the lightemitting device package 100 according to the embodiment is bondedthrough a reflow process to a main substrate, a re-melting phenomenonmay not occur. Accordingly, there is an advantage that the electricalconnection and the physical bonding force in the bonding portion do notdeteriorate. In addition, according to the light emitting device package100 according to the embodiment, the package body 110 does not need tobe exposed to high temperatures in the process of manufacturing thelight emitting device package. Therefore, according to the embodiment,the package body 110 may be prevented from being damaged or discoloreddue to exposure to high temperature. Accordingly, a selection range forthe material constituting the body 113 may be widened. According to anembodiment, the body 113 may be provided using a relatively inexpensiveresin material as well as an expensive material such as a ceramic. Forexample, the body 113 may include at least one material selected fromthe group consisting of a Polyphthalamide (PPA) resin, aPolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, and a silicone molding compound (SMC) resin.

The light emitting device package 100 according to the embodiment mayinclude a first resin 130. The first resin 130 may be disposed betweenthe body 113 and the light emitting device 120. The first resin 130 maybe disposed between the upper surface of the body 113 and the lowersurface of the light emitting device 120. The first resin 130 may bedisposed between the first bonding portion 121 and the second bondingportion 122. The first resin 130 may be disposed between the firstprotruding portion P1 and the second protruding portion P2. For example,the first resin 130 is in contact with the side of the first bondingportion 121 and the side of the second bonding portion 122 and may faceor contact an inside of the first protruding portion P1 and the secondprotruding portion P2. A thickness of the first resin 130 may be greaterthan the height d or the thickness of the protruding portions P1 and P2.The first resin 130 may be in contact with the light emitting device120.

The first resin 130 may provide a stable fixing force between the lightemitting device 120 and the package body 110. The first resin 130 may bean adhesive. The first resin 130 may provide a stable fixing forcebetween the light emitting device 120 and the body 113. The first resin130 may be disposed in direct contact with the upper surface of the body113. The first resin 130 may directly contact the lower surface of thelight emitting device 120. For example, the first resin 130 may includeat least one of an epoxy material, a silicon material, a hybrid materialincluding an epoxy material and a silicon material. Also, as an example,when the first resin 130 includes a reflective function, the first resin130 may include white silicone. The material of the first resin 130 maybe formed of a material that radiates heat generated from the lightemitting device 120.

When light is emitted to the bottom surface of the light emitting device120, the first resin 130 may provide a light diffusion function betweenthe light emitting device 120 and the body 113. Since the first resin130 provides a light diffusing function, light extraction efficiency ofthe light emitting device package 100 may be improved. In addition, thefirst resin 130 may reflect light emitted from the light emitting device120. When the first resin 130 includes a reflection function, the firstresin 130 may be formed of a material including TiO2, Silicone, or thelike.

Referring to FIGS. 4 to 6, the light emitting device package 100according to the embodiment may include a second resin 135. Forreference, in FIG. 1, the second resin 135 and the molding portion 140is not shown to be arranged so that the arrangement relationship betweenthe first frame 111, the second frame 112, and the body 113 may be wellrepresented.

The second resin 135 may be disposed between the first frame 111 and thelower portion of the light emitting device 120. The second resin 135 maybe disposed between the second frame 112 and the lower portion of thelight emitting device 120. The second resin 135 may be provided on thebottom surface of the cavity 102 provided in the package body 110. Thesecond resin 135 may be disposed on side surfaces of the first bondingportion 121 and the second bonding portion 122. The second resin 135 maybe in contact with the bottom surface of the light emitting device 120.The thickness of the second resin 135 may be greater than the height dor the thickness of the protruding portions P1 and P2. The second resin135 may be in contact with the light emitting device 120.

The second resin 135 may be disposed around the lower portion of thelight emitting device 120. The second resin 135 may be connected to oradhered to the first resin 130. A portion of the upper surface of thesecond resin 135 may be lower than the lower surface of the lightemitting device 120. The thickness of the second resin 135 may be equalto or smaller than a distance (E.g. d) between the lower surface of thelight emitting device 120 and the upper surfaces of the frames 111 and112. The second resin 135 may surround or contact the outside of thebonding portions 121 and 122. The second resin 135 may surround orcontact the outside of the protruding portions P1 and P2.

The first resin 130 and the second resin 135 may contact the outside ofthe conductive layers 127 and 129 disposed on the side surfaces P11 andP12 of the protruding portions P1 and P2. The second resin 135 maysurround or contact the outside of the conductive layers 127 and 129.The second resin 135 and the first resin 130 may seal the surfaces ofthe conductive layers 127 and 129 and contact the lower surface of thelight emitting device 120. Accordingly, the second resin 135 and thefirst resin 130 may protect the light emitting device 120 from theconductive layers 127 and 129.

For example, the second resin 135 may include at least one of anepoxy-based material, a silicon-based material, a hybrid materialincluding an epoxy-based material and a silicon-based material. Thesecond resin 135 may be a reflective portion that reflects light emittedfrom the light emitting device 120. For example, the second resin 135may be a resin including a reflective material such as TiO2 or mayinclude white silicone.

The second resin 135 may be disposed under the light emitting device 120to perform a sealing function. The second resin 135 may improve theadhesion between the light emitting device 120 and the first frame 111.The second resin 135 may improve the adhesion between the light emittingdevice 120 and the second frame 112.

When the second resin 135 includes a material having a reflectiveproperty such as white silicon, the second resin 135 may reflect lightprovided from the light emitting device 120 to the upper direction ofthe package body 110 and the light extraction efficiency of the lightemitting device package 100 may be improved. The second resin 135 andthe first resin 130 may be formed of the same material.

Referring to FIG. 4, the molding portion 140 may be disposed on thelight emitting device 120. The molding portion 140 may be disposed onthe first frame 111 and the second frame 112. The molding portion 140may be disposed in the cavity 102 provided by the reflective portion110A of the package body 110. The molding portion 140 may be disposed onthe second resin 135. The molding portion 140 may be in contact with anupper surface of the second resin 135, an upper surface and a sidesurface of the light emitting device 120, and a part of the side surfaceof the cavity 102. The side surface of the cavity 102 may include alower first side portion and an upper second side portion 134, and thelower first side portion may contact the second resin 135. The secondside portion 134 may be disposed above the first side portion and maycontact the molding portion 140.

The molding portion 140 may include an insulating material. The moldingportion 140 may include a transparent material. The molding portion 140may include wavelength conversion means for receiving the light emittedfrom the light emitting device 120 and providing thewavelength-converted light. The wavelength converting means is amaterial added in the molding portion 140 and may include a phosphor ora quantum dot. For example, the molding portion 140 may be at least oneof a group including a phosphor or a quantum dot. The molding portion140 may be formed as a single layer or a multilayer, and in the case ofa multilayer, any one layer may be free of impurities such as phosphors,and the other layer may have impurities such as phosphors.

The upper surface of the molding portion 140 may be concave or convex.The upper surface of the molding portion 140 may be a flat, curved orrough surface.

In the light emitting device package 100 according to the embodiment,power is connected to the first bonding portion 121 through the firstprotruding portion P1, and is connected to the second bonding portion122 through the second protruding portion P2.

Accordingly, the light emitting device 120 may be driven by drivingpower supplied through the first bonding portion 121 and the secondbonding portion 122. In addition, the light emitted from the lightemitting device 120 may be provided in an upper direction of the packagebody 110.

On the other hand, according to another example of the light emittingdevice package according to an embodiment of the invention, the secondresin 135 is not provided separately, the molding portion 140 may bearranged in direct contact the first frame 111 and the second frame 112.

Referring to FIG. 5, the height d of the protruding portions P1 and P2in the frames 111 and 1112 may be smaller than the thickness a of theframes 111 and 112. For example, the height d may be in the range of 25%or more, for example, 25% to 75% of the thickness a. The height d of thefirst and second protruding portions P1 and P2 may protrude from theupper surfaces of the frames 111 and 112 in a range of 50 micrometers ormore, for example, 50 to 100 micrometers. If the protruding height d ofthe first and second protruding portions P1 and P2 is smaller than therange, the protruding height is lowered, which may cause a problem thatthe conductive paste may ride up to the side of the light emittingdevice 120. When the protruding height d of the first and secondprotruding portions P1 and P2 exceeds the range, a hardness of theframes 111 and 112 may be reduced. The thickness a of the frames 111 and112 may be 120 micrometers or more, for example, in a range of 120 to300 micrometers or in a range of 200 to 270 micrometers.

When the height d of the protruding portions P1 and P2 is smaller thanthe range, the thickness of the second resin 135 disposed around thelower portion of the light emitting device 120 becomes thinner than 50micrometers, and there is a problem that the function as the reflectiveresin is reduced. Accordingly, when the height d of the protrudingportions P1 and P2 is formed in the above range, it is possible toensure the thickness of the second resin 135 and may be provided as awhite resin to prevent the decrease in light reflection efficiency.

The second protruding portion P2 may be disposed under the secondbonding portion 122 of the light emitting device 120. The secondprotruding portion P2 may overlap the second bonding portion 122 of thelight emitting device 120 in the third direction. The second protrudingportion P2 may be provided to overlap the second bonding portion 122 ofthe light emitting device 120 in the third direction from a top surfaceof the second frame 112 to a bottom surface thereof.

The first protruding portion P1 and the second protruding portion P2 maybe spaced apart from each other. The first protruding portion P1 and thesecond protruding portion P2 may be spaced apart from each other underthe lower surface of the light emitting device 120.

Here, the first and second protruding portions P1 and P2 may includeflat surfaces in an upper region thereof, and side surfaces P11 and P12around the first and second protruding portions P1 and P2 may bedisposed in an inclined surfaces or curved surfaces. An area of theentire region protruding from the first protruding portion P1 may beequal to or smaller than an area of the lower surface of the firstbonding portion 121. The area of the entire region protruding from thesecond protruding portion P2 may be equal to or smaller than the area ofthe lower surface of the second bonding portion 122. The area of thehorizontal upper region in the first and second protruding portions P1and P2 may be larger than an area of the inclined side surfaces P11 andP12, and the contact area of the bonding portion may be increased.

The upper regions of the first and second protruding portions P1 and P2may face the first and second bonding portions 121 and 121. The outerregions or the side surfaces P11 and P12 of the first and secondprotruding portions P1 and P2 may be spaced apart from the lowersurfaces of the first and second bonding portions 121 and 122. An areaof a horizontal plane of the upper regions in the first and secondprotruding portions P1 and P2 may be smaller than an area of the lowersurface of each of the bonding portions 121 and 122.

As shown in FIG. 5, a width b in the upper region of the firstprotruding portion P1 in the first direction may be smaller than orequal to a width W2 of the first bonding portion 121. A width of theupper region of the second protruding portion P2 in the first directionmay be smaller than or equal to a width of the second bonding portion122. The width W2 of the first bonding portion 121 is 20% or more thanthe width of the first direction of the light emitting device 120 andmay be, for example, in a range of 20% to 40%. The areas of the upperregions of the first and second protruding portions P1 and P2 mayprevent the areas corresponding to the first and second bonding portions121 and 122 from being reduced.

As shown in FIG. 6, the length b1 of the upper region of the firstprotruding portion P1 in the second direction Y may be smaller than alength W3 of the first bonding portion 121. The length W3 of the firstbonding portion 121 is 70% or more than the length of the first lightemitting device 120 in the second direction, and may be, for example, ina range of 70% to 95%.

The width b of the first direction X in the upper regions of the firstand second protruding portions P1 and P2 may be 50% or more, forexample, 50% to 90% of the width W2 of the bonding portions 121 and 122.It may be a range. When the width b is within the above range,reliability of thermal conductivity and electrical conductivity may beimproved by bonding the first and second protruding portions P1 and P2to the bonding portions 121 and 122. The width b may be in the range of200 micrometers or more, for example 200 to 300 micrometers. The holdingforce (e.g. DST) of the light emitting device 110 having the bondingportions 121 and 122 may be increased.

The first bonding portion 121 of the light emitting device 120 and thefirst protruding portion P1 of the first frame 111 may be connected bythe first conductive layer 127. The second bonding portion 122 and thesecond protruding portion P2 of the second frame 112 may be connected bythe second conductive layer 129. When the first and second bondingportions 121 and 122 are bonded to the first and second protrudingportions P1 and P2, the first and second conductive layers 127 and 129are disposed on a flat portion of P2 and a portion of the first andsecond conductive layers 127 and 129 flows to the side surfaces P11 andP12 located in a low region thereof. Accordingly, the first and secondconductive layers 127 and 129 may be disposed on side surfaces P11 andP12 of the first and second protruding portions P1 and P2 and may befurther spaced apart from the bottom surface of the light emittingdevice 120.

Accordingly, when the first and second conductive layers 127 and 129 arebonded in the bonding process of the light emitting device 120, aportion of the first and second conductive layers 127 and 129 may bemoved downward and may be prevented from a movement along the sidesurfaces of the light emitting device 120 (Pa in FIG. 5). Therefore, theproblem of absorbing the light emitted through the side surface of thelight emitting device 120 by the first and second conductive layers 127and 129 or giving a short circuit to the semiconductor layer may besolved.

The first and second frames 111 and 112 may be more firmly attached tothe first and second bonding portions 121 and 122 of the light emittingdevice 120 by the first and second conductive layers 127 and 129.

The distance W5 from the edges of the upper regions of the first andsecond protruding portions P1 and P2 to the ends of the first and secondbonding portions 121 and 122 may be provided between 40 and 60micrometers. When the distance W5 is 40 micrometers or more, the firstand second bonding portions 121 and 122 may secure a process margin forcontacting the upper surfaces of the first and second protrudingportions P1 and P2. In the manufacturing process, the conductive pastewhich is the conductive layers 127 and 129 may not fall in the downdirection. When the distance W5 is 60 micrometers or less, an area ofthe first and second bonding portions 121 and 122 exposed to the firstand second protruding portions P1 and P2 may be secured, and the firstand second bonding portions 121 and 122 and the second resin 135 maycontact each other to improve reliability.

The distance W6 between the first and second bonding portions 121 and122 and the side surface of the light emitting device 120 may bedisposed in a range of 60 micrometers or more, for example, 60 to 90micrometers. If the distance W6 is not secured, the distance between theconductive layers 127 and 129 is difficult to be secured, which maycause a problem due to the conductive paste. That is, when the distance(W5+W6) between the side surfaces of the light emitting device 120 fromthe flat surfaces of the first and second bonding portions 121 and 122is spaced in the range of at least 100 micrometers, a periphery of theprotruding portions P1 and P2 may be secured a safety distance by theconductive layers 127 and 129.

The width b and the length b1 of the upper region of the firstprotruding portion P1 may be smaller than the width and the length ofthe lower region of the first protruding portion P1. The width andlength of the upper region of the second protruding portion P2 may besmaller than the width and length of the lower region of the secondprotruding portion P2. When the width and length of the upper regions ofthe first and second protruding portions P1 and P2 are greater than thewidth and length of the lower regions of the first and second protrudingportions P1 and P2, the hardness of the protruding portion is lowered, athickness of the inclined part of the protruding portion may be thin, orit is difficult to an injection molding.

The first and second protruding portions P1 and P2 may be provided in aninclined form by gradually decreasing in width from the lower region tothe upper region by side surfaces P11 and P12. A top view shape of thefirst and second protruding portions P1 and P2 may have a polygonalshape, an ellipse shape, or a circular shape. Side cross-sectionalshapes of the first and second protruding portions P1 and P2 may bepolygonal, hemispherical or semi-elliptic. The side surfaces P11 and P12may have a plurality of inclined surfaces having different inclinationsor may be arranged as curved surfaces having different curvatures.

The interval between the first protruding portion P1 and the secondprotruding portion P2 in the lower region of the first frame 111 and thesecond frame 112 may be provided as 100 micrometers or more, forexample, 100 to 150 micrometers.

In the lower region of the first frame 111 and the second frame 112, thedistance between the first protruding portion P1 and the secondprotruding portion P2 is determined by the light emitting device package100 according to an embodiment. When the light emitting device package100 is mounted on the circuit board, sub-mount, or the like, thedistance may be selected to be provided over a certain distance toprevent electrical short between pads.

Referring to FIGS. 2 and 5, when the protruding portions P1 and P2 aredisposed adjacent to the body 113, the frames 111 and 112 may be rolledor wound in the side direction of the body by the protruding portions P1and P2, which may lower the reliability of the package. Accordingly, thedistance c between the edges of the protruding portions P1 and P2 andthe body 113 may be 120 micrometers or more, for example, in the rangeof 120 to 300 micrometers or in the range of 200 to 270 micrometers. Aratio c:d between the distance c and the thickness d of the frames 111and 112 may range from 0.8:1 to 1:0.8. For example, the distance c andthe thickness d may be the same and may be a ratio (c:d) of 1:1. Theratio b:a of the width b of the upper regions of the protruding portionsP1 and P2 and the thickness a of the frames 111 and 112 may be 0.8:1 to1:0.8. Alternatively, the width b and the thickness a may be the sameand may be a ratio (b:a) of 1:1. The ratio b:c of the width b of theupper regions of the protruding portions P1 and P2 and the distance cbetween the body 113 and the protrusion portions may be 0.8:1 to 1:0.8,or 1:1. In this ratio, the width b of the upper region of the protrudingportions P1 and P2 and the distance c between the protruding portions P1and P2 and the body based on the thickness a of the frames 111 and 112may be 80% to 120%. Therefore, when the width b of the upper regions ofthe protruding portions P1 and P2, the distance c from the body 113, andthe thickness a of the frames 111 and 112, a ratio b:c:d may include1:1:1. According to the embodiment, when the protruding portions P1 andP2 are formed in the frames 111 and 112, the problems in which theframes 111 and 112 are rolled or wound by the protruding portions P1 andP2 may be prevented, and a flat areas of the bonding portions 121 and122 and the protruding portions P1 and P2 may be provided in a range inwhich thermal conductivity and electrical conductivity are not degraded.

The protruding portions P1 and P2 of the frames 111 and 112 according tothe embodiment have side surfaces P11 and P12 inclined to the outsideand overlap the light emitting device 120 in the vertical direction, andmay be disposed in the regions of the bonding portions 121 and 122. As aresult, when the conductive layers 127 and 129 are formed, the paste ofthe conductive layers 127 and 129 may rise to the side of the lightemitting device 120. In addition, since the conductive layers 127 and129 are spaced apart from the side surface of the light emitting device120 and the second resin 135 extends to the bottom of the light emittingdevice 120, and a light reflection efficiency on the lower portion andthe outside of the light emitting device 120 may be improved.

In addition, since a process without a separate half etching is removedon the upper portions of the frames 111 and 112, the process may besimplified and the protruding portions may be provided by a frame mold,thereby lowering the frame cost and the price of the package. Therefore,the reliability of the light emitting device package may be improved.

FIGS. 7 and 8 are another example of the body of the light emittingdevice package of FIG. 1. In the description of FIGS. 7 and 8, theabove-described configuration may be selectively applied, and detaileddescription thereof will be omitted.

Referring to FIGS. 7 and 8, the light emitting device package mayinclude a recess R in at least one or both of the frames 111 and 112 andthe body 113. The recess R may be provided in the body 113, for example.The recess R may be provided between the first protruding portion P1 andthe second protruding portion P2. The recess R may be recessed toward adirection of the lower surface from an upper surface of the body 113.The recess R may be disposed under the light emitting device 120. Therecess R may overlap the light emitting device 120 in the thirddirection.

The first resin 130 may be disposed in the recess R. The first resin 130may be disposed between the light emitting device 120 and the body 113.The first resin 130 may be disposed between the first bonding portion121 and the second bonding portion 122. For example, the first resin 130may be disposed in contact with the side surface of the first bondingportion 121 and the side surface of the second bonding portion 122.

A portion of the first resin 130 may be fixed to the recess R and mayprovide a stable fixing force between the light emitting device 120 andthe package body 110. The area of the first resin 130 bonded to theresin material of the body 113 is increased to provide a stable fixingforce between the light emitting device 120 and the body 113. The firstresin 130 may be disposed in direct contact with the upper surface ofthe body 113. The first resin 130 may be disposed in direct contact withthe lower surface of the light emitting device 120.

For example, the first resin 130 may include at least one of an epoxymaterial, a silicon material, a hybrid material including an epoxymaterial and a silicon material. In addition, as an example, when thefirst resin 130 includes a reflective function, the first resin 130 mayinclude white silicone.

The first resin 130 may be coupled to the recess R to provide a stablefixing force between the body 113 and the light emitting device 120, andlight may be emitted to the bottom surface of the light emitting device120. In this case, a light diffusing function may be provided betweenthe light emitting device 120 and the body 113. When light is emittedfrom the light emitting device 120 to the bottom surface of the lightemitting device 120, the first resin 130 may improve light extractionefficiency of the light emitting device package 100 by providing a lightdiffusing function. In addition, the first resin 130 may reflect lightemitted from the light emitting device 120. When the first resin 130includes a reflection function, the first resin 130 may be made of amaterial including TiO2, Silicone, and the like.

According to an embodiment, a depth of the recess R may be providedsmaller than the thickness of the frames 111 and 112. The depth of therecess R may be determined in consideration of the adhesive force of thefirst resin 130. In addition, the depth of the recess R may bedetermined in consideration the stable strength of the body 113 and/orto prevent cracks in the light emitting device package 100 due to heatgenerated from the light emitting device 120. The depth of the recess Rmay be smaller than the thickness of the body 113 disposed between theframes 111 and 112.

The recess R may provide a proper space under the light emitting device120 in which a kind of underfill process may be performed. Here, theunderfill process may be a process of mounting the light emitting device120 on the package body 110 and then disposing the first resin 130 underthe light emitting device 120, or in the process of mounting the lightemitting device 120 on the package body 110, the first resin 130 may bea process of disposing in the body 113 and the recess R and thendisposing the light emitting device 120. The recess R may be provided toa depth greater than or equal to a first depth so that the first resin130 is sufficiently provided between the lower surface of the lightemitting device 120 and the top surface of the body 113. In addition,the recess R may be provided below a second depth in order to providestable strength of the body 113.

The width in the first direction of the recess R may be smaller than aninterval between the frames 111 and 112. The width of the recess R maybe provided in a long axis direction of the light emitting device 120.The width in the first direction of the recess R may be smaller than thewidth in the first direction of the protruding portions P1 and P2. Thedepth and width of the recess R may be determined so that sufficientfixing force may be provided by the first resin 130 disposed between thebody 113 and the light emitting device 120. For example, the depth ofthe recess R may be provided to 40 micrometers to 60 micrometers. Thewidth of the recess R may be provided to 140 micrometers to 160micrometers.

The length of the recess R in the second direction may be longer thanthe length of the long axis of the light emitting device 120. In thiscase, the first resin 130 may be exposed to the outside of the lightemitting device 120 to perform a light reflection function. The lengthof the recess R in the second direction may be smaller than the lengthof the long axis of the light emitting device 120. In this case, thelower surface of the light emitting device 120 may be adhered to thefirst resin 130.

A first region of the recess R may overlap with the light emittingdevice 120 in the vertical direction, and a second region may beconnected to the first region and may not overlap with the lightemitting device 120 in the vertical direction.

One or more recesses R may be disposed in the body 113 disposed betweenthe first and second frames 111 and 113. The outside of the recess R maybe disposed outside the side of the light emitting device 120. Both endsof the recess R may be disposed outside the side surfaces of the lightemitting device 120. The recess R may have a top view shape in a circleshape, an ellipse shape, or a polygonal shape. The side cross-sectionalshape of the recess R may be a hemispherical shape, a shape having acurved surface, or a polygonal shape.

According to the embodiment, since the protruding portions P1 and P2 ofthe frames 111 and 113 are disposed under the light emitting device 120,an interval between the lower surface of the light emitting device 120and the frames 111 and 112 and an interval between the light emittingdevice 120 and the body 113 may be larger than a structure without theprotruding portions. Accordingly, since a thickness of the first resin130 and the second resin 135 may be increased, a lower adhesive forceand a supporting force of the light emitting device 120 may be enhanced.In addition, since the interval between the light emitting device 120and the frames 111 and 112 is further spaced apart, it is possible toincrease the thickness of the second resin 135 and to prevent a shortproblem on the side of the light emitting device 120. In addition, thelight reflection efficiency by the second resin 135 may be improved.

In the light emitting device package according to the embodiment, therecess may be further disposed under the frames 111 and 112 tostrengthen the coupling with the body. By providing a stepped structureon the lower portions of the frames 111 and 112, the coupling with thebody may be strengthened and the spreading of the solder may beadjusted.

FIG. 9 is a modified example of a recess in the light emitting devicepackage of FIGS. 7 and 8. Referring to FIG. 9, in the description ofFIG. 9, the above-described configuration may be selectively applied,and detailed description thereof will be omitted.

Referring to FIG. 9, the light emitting device package may includethrough holes in at least one or both of the frames 111 and 112 and thebody 113. The through hole 115A may be provided in the body 113, forexample. The through hole 115A may be provided between the firstprotruding portion P1 and the second protruding portion P2. The throughhole 115A may be provided to penetrate from the upper surface of thebody 113 to the lower surface of the body 113. The through hole 115A maybe disposed under the light emitting device 120. The through hole 115Amay overlap the light emitting device 120 in the third direction.

The first resin 130 may be disposed in the through hole 115A. The firstresin 130 may be disposed between the light emitting device 120 and thebody 113. The first resin 130 may be disposed between the first bondingportion 121 and the second bonding portion 122. For example, the firstresin 130 may be disposed in contact with a side surface of the firstbonding portion 121 and a side surface of the second bonding portion122. When the first resin 130 is formed, the first resin 130 may beformed in the through hole 115A after the supporting sheet is disposedon the bottom of the package body 110.

The first resin 130 may be disposed on the through hole 115A and thebody 113 to provide a stable fixing force between the light emittingdevice 120 and the package body 110. The area of the first resin 130adhered to the resin material of the body 113 is increased to provide astable fixing force between the light emitting device 120 and the body113. For example, the first resin 130 may be disposed in direct contactwith an upper surface of the body 113. The first resin 130 may bedisposed in direct contact with the lower surface of the light emittingdevice 120. The first resin 130 may be exposed on the lower surface ofthe body 113.

For example, the first resin 130 may include at least one of an epoxymaterial, a silicon material, a hybrid material including an epoxymaterial and a silicon material. For example, the first resin 130 mayinclude a material that reflects or diffuses light. The first resin 130may include a thermally conductive material. The configuration of thefirst resin 130 will be referred to the description disclosed above.

According to an embodiment, the depth of the through hole 115A may beequal to the thickness of the frames 111 and 112. The width of thethrough hole 115A may be considered a stable strength of the body 113and/or may be determined so that a crack does not occur in the lightemitting device package 100 by heat emitted from the light emittingdevice 120.

The width in the first direction of the through hole 115A may be smallerthan an interval between the frames 111 and 112. The width of thethrough hole 115A may be provided in the long axis direction of thelight emitting device 120. The width of the through hole 115A in thefirst direction may be smaller than the width of the protruding portionsP1 and P2 in the first direction. The length of the through hole 115Amay be smaller or larger than the length of the light emitting device120 in the long axis direction, for example, the length in the seconddirection.

According to the embodiment, since the protruding portions P1 and P2 ofthe frames 111 and 113 are disposed under the light emitting device 120,an interval between the lower surface of the light emitting device 120and the frames 111 and 112 and an interval between the upper surface ofthe light emitting device 120 and the body 113 may be larger than astructure without the protruding portions. Accordingly, the thicknessesof the first resin 130 and the second resin 135 may be secured, therebyenhancing the lower adhesive force and the supporting force of the lightemitting device 120. In addition, since the interval between the lightemitting device 120 and the frames 111 and 112 is further spaced apart,it is possible to increase the thickness of the second resin 135 mayprevent the short problem on the side of the light emitting device 120.In addition, the light reflection efficiency by the second resin 135 maybe improved.

In the light emitting device package according to the embodiment, thethrough hole may be further disposed below the frames 111 and 112 tostrengthen the coupling with the body. In addition, by providing astepped structure in the lower portion of the frames 111 and 112, thecoupling with the body may be strengthened and the spreading of thesolder may be adjusted.

FIG. 10 is a modified example of a body and a frame of the frame in thelight emitting device package of FIG. 1, and FIG. 11 is an example of aside sectional view in which the structure of FIG. 10 is applied to thepackage of FIG. 1.

Referring to FIGS. 10 and 11, the light emitting device package mayinclude a first upper recess R2 and a second upper recess R3. The firstupper recess R2 may be provided on an upper surface of the first frame111. The first upper recess R2 may be concave in a direction of thelower surface from the upper surface of the first frame 111. The firstupper recess R2 may be spaced apart from the first protruding portionP1. As shown in FIG. 10, the first upper recess R2 may be providedadjacent to three sides of the first bonding portion 121 when viewedfrom an upper direction. For example, the first upper recess R2 may bedisposed along the periphery of the first bonding portion 121.

The second upper recess R3 may be provided on the upper surface of thesecond frame 112. The second upper recess R3 may be concave in adirection of the lower surface from the upper surface of the secondframe 112. The second upper recess R3 may be spaced apart from thesecond protruding portion P2. As shown in FIG. 10, the second upperrecess R3 may be provided adjacent to three sides of the second bondingportion 122 when viewed from the upper direction. For example, thesecond upper recess R3 may be provided along each side of the secondbonding portion 122.

For example, the second resin 135 may be included in the first upperrecess R2 and the second upper recess R3. The second resin 135 may beprovided in the first upper recess R2 and the second upper recess R3.The second resin 135 may be disposed on side surfaces of the first andsecond bonding portions 121 and 122. The second resin 135 may beprovided in the first and second upper recesses R2 and R3, and mayextend to an area where the first and second bonding portions 121 and122 are disposed. The second resin 135 may be disposed under thesemiconductor layer 123. The distance from the ends of the first andsecond upper recesses R2 and R3 to the adjacent ends of the lightemitting device 120 may be provided equal to or smaller than 200micrometers. The upper recesses R2 and R3 may be connected to each otheralong the upper periphery of the frames 111 and 112 and the body 113.The second resin 135 may be disposed on the upper recesses R2 and R3 tohave a boundary surface with the first resin 130 or to contact eachother.

The second resin 135 may also be provided on side surfaces of thesemiconductor layer 123. The second resin 135 may be disposed on theside surface of the semiconductor layer 123 to effectively prevent thefirst and second conductive layers 321 and 322 from moving to the sidesurface of the semiconductor layer 123. In addition, when the secondresin 135 is disposed on the side surface of the semiconductor layer123, the second resin 135 may be disposed under the active layer of thesemiconductor layer 123, thereby improving light extraction efficiencyof the light emitting device 120.

For example, the second resin 135 may include at least one of anepoxy-based material, a silicon-based material, a hybrid materialincluding an epoxy-based material and a silicon-based material. Inaddition, the second resin 135 may include a reflective material, andmay include, for example, white silicone including TiO2 and/or Silicone.

FIGS. 12 to 14 will be described a method of manufacturing the lightemitting device package according to an embodiment of the presentinvention. Referring to FIGS. 12 to 14, in the method of manufacturingthe light emitting device package according to an exemplary embodimentof the present invention, the descriptions of the overlapping contentsdescribed with reference to FIGS. 1 to 3 may be omitted.

As shown in FIG. 12, the light emitting device package is provided witha package body 110. The package body 110 may include the first frame 111and the second frame 112. The first frame 111 and the second frame 112may be spaced apart from each other. The first frame 111 may include thefirst protruding portion P1. The second frame 112 may include the secondprotruding portion P2. The package body 110 may include, but is notlimited to, a recess provided in the body 113 and/or an upper recess ofthe frames. The recess or upper recess will be referred to thedescription disclosed above.

After the conductive layers 127 and 129 are formed on the protrudingportions P1 and P2, the first and second bonding portions 121 and 122 ofthe light emitting device 120 are aligned and attached to overlap theprotruding portions P1 and P2. The first conductive layer 127 may bedisposed in direct contact with the lower surface of the first bondingportion 121. The first conductive layer 127 may be electricallyconnected to the first bonding portion 121. The second conductive layer129 may be disposed in direct contact with the lower surface of thesecond bonding portion 122. The second conductive layer 129 may beelectrically connected to the second bonding portion 122. For example,the conductive layers 127 and 129 may be formed using a conductivepaste, and the conductive layers 127 and 129 may be formed throughsolder paste or silver paste. The conductive layers 127 and 129 may forman intermetallic compound layer by combining a material constituting thebonding portions 121 and 122 with a material constituting the frames 111and 112. An alloy layer formed of the intermetallic compound layer mayinclude at least one selected from the group including AgSn, CuSn, AuSn,etc. The intermetallic compound layer may be formed by a combination ofa first material and a second material, the first material may beprovided from the conductive layers 127 and 129, and the second materialmay be provided from the bonding portions 121 and 122 or the frames 111and 112.

As shown in FIG. 13, the second resin 135 and the first resin 130 areformed in the light emitting device package. In the case where thesecond resin 135 and the first resin 130 are formed of the samematerial, the second resin 135 and the first resin 130 may be processedin the same process or may be processed in another process. The secondresin 135 and the first resin 130 may be the same material or differentmaterials. The second resin 135 and the first resin 130 may be disposedon the package body 110, and may be formed on the first frame 111, thesecond frame 112, and the body 113. The second resin 135 may be disposedbetween the first frame 111 and the light emitting device 120. Thesecond resin 135 may be disposed between the second frame 112 and thelight emitting device 120.

The second resin 135 may be disposed on side surfaces of the firstbonding portion 121 and the first conductive layer 127. The second resin135 may be disposed on the side surface of the second bonding portion122. The second resin 135 may be disposed under the semiconductor layer123. For example, the second resin 135 may include at least one of anepoxy-based material, a silicon-based material, a hybrid materialincluding an epoxy-based material and a silicon-based material. May be.For example, the second resin 135 may be a reflective portion thatreflects light emitted from the light emitting device 120. For example,the second resin 135 may be a resin including a reflective material suchas TiO2. The second resin 135 may include white silicone.

The second resin 135 and the first resin 130 may be disposed under thelight emitting device 120 to perform a sealing function. In addition,the second resin 135 and the first resin 130 may improve the adhesionbetween the light emitting device 120 and the first frame 111. Thesecond resin 135 may improve the adhesion between the light emittingdevice 120 and the second frame 112.

When the second resin 135 and the first resin 130 include a materialhaving reflective properties such as white silicon, the second resin 135receives light provided from the light emitting device 120 in thepackage. The light extraction efficiency of the light emitting devicepackage 100 may be improved by reflecting toward the upper direction ofthe body 110.

Referring to FIG. 14, a molding portion 140 may be provided on the lightemitting device 120. The molding portion 140 may be provided on thelight emitting device 120. The molding portion 140 may be disposed onthe first frame 111 and the second frame 112. The molding portion 140may be disposed in the cavity 102 provided by the reflective portion110A of the package body 110. The molding portion 140 may be disposed onthe second resin 135.

The molding portion 140 may include an insulating material. In addition,the molding portion 140 may include wavelength conversion means forreceiving the light emitted from the light emitting device 120 andproviding the wavelength-converted light. For example, the moldingportion 140 may be at least one selected from the group includingphosphors, quantum dots, and the like. The molding portion 140 may beformed as a single layer or a multilayer, and in the case of themultilayer, any one layer may be free of impurities such as phosphors,and the other layer may have impurities such as phosphors.

In the light emitting device package 100 according to the embodiment, apower is connected to the first bonding portion 121 through the firstprotruding portion P1, and is connected to the second bonding portion122 through the second bonding portion P2. Accordingly, the lightemitting device 120 may be driven by driving power supplied through thefirst bonding portion 121 and the second bonding portion 122. Inaddition, the light emitted from the light emitting device 120 may beprovided in an upper direction of the package body 110.

On the other hand, the light emitting device package 100 according tothe embodiment may be supplied mounted on a sub-mount or a circuitboard. However, in the conventional light emitting device package ismounted on a sub-mount or a circuit board, a high temperature processsuch as a reflow may be applied. In this case, in the reflow process, are-melting phenomenon may occur in a bonding region between the frameand the light emitting device provided in the light emitting devicepackage. Accordingly, there is an advantage that the electricalconnection and the physical bonding force in the bonding portion do notdeteriorate. Therefore, the position of the light emitting device may bechanged, and the optical, electrical properties, and reliability of thelight emitting device package may be degraded. However, according to thelight emitting device package and the method of manufacturing the lightemitting device package according to the embodiment, the bondingportions of the light emitting device according to the embodiment may beprovided with a driving power through the protruding portion and theconductive layer. In addition, the melting point of the protrudingportion and the conductive layer may be selected to have a higher valuethan the melting point of the general bonding material. Accordingly, thelight emitting device package according to the embodiment does not causere-melting even when bonded to a main substrate through a reflowprocess, so that the electrical connection and physical bonding forceare not degraded.

According to the manufacturing method of the light emitting devicepackage 100 and the light emitting device package according to theembodiment, the package body 110 does not need to be exposed to hightemperatures in the process of manufacturing the light emitting devicepackage. Therefore, according to the embodiment, the package body 110may be prevented from being damaged or discolored due to exposure tohigh temperature. Accordingly, the selection range for the materialconstituting the body 113 may be widened. According to an embodiment,the body 113 may be provided using a relatively inexpensive resinmaterial as well as an expensive material such as a ceramic. Forexample, the body 113 includes at least one material selected from thegroup consisting of a Polyphthalamide (PPA) resin, aPolycyclohexylenedimethylene terephthalate (PCT) resin, an epoxy moldingcompound (EMC) resin, and a silicone molding compound (SMC) resin.

Second Embodiment

To begin with, a light emitting device package according to an exemplaryembodiment of the present invention will be described with reference toFIGS. 15 to 21.

FIG. 15 is a plan view of a light emitting device package according toan embodiment of the present invention, FIG. 16 is a view illustrating acavity bottom in FIG. 15, FIG. 17 is a bottom view of the light emittingdevice package of FIG. 15, FIG. 18 is a cross-sectional view taken alongline A-A of the light emitting device package shown in FIG. 15, FIG. 19is a cross-sectional view taken along line A1-A1 of the light emittingdevice package shown in FIG. 15, FIG. 20 is a cross-sectional view takenalong line A2-A2 of the light emitting device package shown in FIG. 15,and FIG. 21 is an enlarged view of a portion where a light emittingdevice is disposed in the light emitting device package of FIG. 18.

Referring to FIGS. 15 to 21, the light emitting device package 101according to the embodiment may include a package body 110 and a lightemitting device 120.

The package body 110 may include a plurality of frames, for example, afirst frame 111 and a second frame 112. The first frame 111 and thesecond frame 112 may be spaced apart from each other in the firstdirection X. The package body 110 may include a body 113. The body 113may be disposed between the first frame 111 and the second frame 112.The body 113 may perform a function of a kind of electrode separationline. The body 113 may be referred to as an insulating member.

A portion of the body 113 may be disposed on the first frame 111. Aportion of the body 113 may be disposed on the second frame 112. Thebody 113 may provide an inclined surface disposed on the first frame 111and the second frame 112. A cavity 102 may be provided on the firstframe 111 and the second frame 112 by the inclined surface of the body113. According to an embodiment, the package body 110 may be provided ina structure having a cavity 102, or may be provided in a structurehaving a flat top surface without the cavity 102. The package body 110may provide a reflective portion 110A having the cavity 102. Thereflective portion 110A may cover the periphery of the cavity 102 and becoupled to the body 110. For example, the body 113 may include thematerial disclosed in the first embodiment. The reflective portion 110Amay be made of the same material as the body 113. As another example,the reflective portion 110A may be made of a material different fromthat of the body 113.

The side surface of the cavity 102 may include a first side portion 132spaced apart from the light emitting device 120 and disposed around thelight emitting device 120. The side surface of the cavity 102 mayinclude a groove portion 133A disposed around the first side portion132, and a second side portion 134 disposed around the groove portion133A. The second side portion 134 is a surface disposed on the grooveportion 133A and may be an upper side surface. The groove portion 133Amay be disposed between the first side portion 132 and the second sideportion 134. The first side portion 132 and the second side portion 134may be disposed around the light emitting device 120.

The first frame 111 and the second frame 112 may be provided as aconductive frame. The first frame 111 and the second frame 112 may belead frames. The first frame 111 and the second frame 112 may stablyprovide structural strength of the package body 110, and may beelectrically connected to the light emitting device 120. The firstextension portion of the first frame 111 may extend in direction of anouter side of the package body 110 and may be exposed or protrude. Thesecond extension portion of the second frame 112 may extend in adirection of the outer side of the package body 110 and may be exposedor protruded.

Referring to FIGS. 16 and 17, the first and second frames 111 and 112may include hole structures ST1 and ST2 coupled to the body 113 and/orthe reflective portion 110A. One or more hole structures ST1 and ST2 maybe disposed in each of the frames 111 and 112. The hole structures ST1and ST2 may have a lower width that is wider than an upper width, but isnot limited thereto. Each of the frames 111 and 112 may have ahemispherical step structure which an outer direction is open, but isnot limited thereto.

As another example, the first frame 111 and the second frame 112 may beprovided as an insulating frame. The first frame 111 and the secondframe 112 may stably provide structural strength of the package body110.

In example embodiments, the light emitting device 120 may include afirst bonding portion 121, a second bonding portion 122, and asemiconductor layer 123. The light emitting device 120 may include asubstrate 124. The light emitting device 120 may have a length in thefirst direction longer than a length in the second direction.

The substrate 124 and the semiconductor layer 123 will be referred tothe description disclosed in the first embodiment, and the configurationof the first embodiment may be selectively applied.

The light emitting device 120 may include first and second bondingportions 121 and 122 at a lower portion thereof. The first bondingportion 121 and the second bonding portion 122 may be spaced apart fromeach other on the lower surface of the light emitting device 120. Thefirst and second bonding portions 121 and 122 may be spaced apart fromeach other in the first direction. The first bonding portion 121 may bedisposed on the first frame 111. The second bonding portion 122 may bedisposed on the second frame 112. The light emitting device 120 may havea flip chip structure or a horizontal chip arranged in a flip shape.

The first bonding portion 121 may be disposed between the semiconductorlayer 123 and the first frame 111. The second bonding portion 122 may bedisposed between the semiconductor layer 123 and the second frame 112.The first bonding portion 121 and the second bonding portion 122 may beformed in a single layer or multiple layers using one or more materialsor alloys of Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Agalloy, Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au,Ni/IrOx/Au/ITO.

In the light emitting device package 100 according to the embodiment, apower is connected to the first bonding portion 121 through the firstflat portion Q1, and is connected to the second bonding portion throughthe second flat portion Q2. Accordingly, the light emitting device 120may be driven by driving power supplied through the first bondingportion 121 and the second bonding portion 122. In addition, the lightemitted from the light emitting device 120 may be provided in an upperdirection of the package body 110.

The light emitting device 120 may be disposed on the package body 110.The light emitting device 120 may be disposed on the first frame 111 andthe second frame 112. The light emitting device 120 may be disposed onthe body 113. The light emitting device 120 may be disposed in thecavity 102 provided by the package body 110.

Referring to FIGS. 15 to 19, the light emitting device package 100according to the embodiment may include the first flat portion Q1 andthe second flat portion Q2. The first frame 111 may include the firstflat portion Q1. The second frame 112 may include the second flatportion Q2.

The first flat portion Q1 and the second flat portion Q2 overlap thelight emitting device 120 in the third direction among the first andsecond frames 111 and 112, and may be a flat region which the lightemitting device 120 may be disposed. The first flat portion Q1 and thesecond flat portion Q2 may be regions protruding from the bottom of thefirst and second upper recesses 11 and 12. The first and second flatportions Q1 and Q2 may be arranged in an island shape by the upperrecesses 11 and 12 disposed around the first and second flat portions Q1and Q2. The first flat portion Q1 may be spaced apart from other flatportions on the first frame 111. The second flat portion Q2 may bespaced apart from other flat portions on the first frame 112. An uppersurface area of the first flat portion Q1 may be disposed in a range of20% or more, for example, in a range of 20% to 45% of an area of thelower surface of the light emitting device 120. An upper surface area ofthe second flat portion Q2 may be disposed in a range of 20% or more,for example, in a range of 20% to 45% of the area of the lower surfaceof the light emitting device 120. When the areas of the upper surface ofthe first and second flat portions Q1 and Q2 are smaller than the range,the heat transfer efficiency may be lowered, and when the area of theupper and lower surfaces are larger than the range, the electricalinterference between the two frames 111 and 112 may occur. The areas ofthe upper surface of the first and second flat portions Q1 and Q2 may bethe same or one may be larger than the others.

The first and second flat portions Q1 and Q2 may be spaced apart fromeach other in the first direction on the bottom of the cavity 102. Thefirst and second flat portions Q1 and Q2 may be spaced apart by thewidth of the body 113 disposed between the first and second frames 111and 112. The first flat portion Q1 may be provided in the first frame111. The first flat portion Q1 may protrude from the first frame 111.The first flat portion Q1 may be provided to protrude from the upper andlower surfaces of the first frame 111 in the third direction Z. Thefirst direction may be a direction in which an imaginary line connectingthe centers of the first and second flat portions Q1 and Q2 extends.

Referring to FIGS. 18 and 21, the first frame 111 includes the firstupper recess 11 around the first flat portion Q1, and the first upperrecess 11 may be a lower region than the upper surface of the first flatportion Q1. The first upper recess 11 may be a half etching region. Thefirst upper recess 11 is disposed at a depth T2 smaller than thethickness of the first flat portion Q1, for example, 40% or more, forexample, in a range of 40% to 60% of the thickness of the first flatportion Q1. The thickness of the first flat portion Q1 may be thethickness T1 of the first frame 111, that is, the maximum thickness ofthe first frame 111. The thickness T1 of the first frame 111 may be 180micrometers or more, for example, in the range of 180 to 300micrometers. The depth T2 of the first upper recess 11 may be 100micrometers or more, for example, in the range of 100 to 150micrometers. If the depth T2 of the first upper recess 11 is greaterthan the range, the hardness of the frames 111 and 112 may be lowered.If the depth T2 of the first upper recess 11 is greater than the range,the bonding strength of the resin may be lowered and the resin may be athinner, which may be degraded by the reflection efficiency.

The second frame 112 includes the second upper recess 12 around thesecond flat portion Q2, and the second upper recess 12 may be a lowerregion than the upper surface of the second flat portion Q2. The secondupper recess 12 may be a half etching region. The second upper recess 12is disposed at a depth smaller than the thickness of the second flatportion Q2, for example, 40% or more, for example, in a range of 40% to60% of the thickness of the second flat portion Q2. The thickness of thesecond flat portion Q2 may be the thickness T1 of the second frame 112,that is, the maximum thickness of the second frame 112. The thickness T1of the second frame 112 may be 180 micrometers or more, for example, inthe range of 180 to 300 micrometers. The depth T0 of the second upperrecess 12 may be 100 micrometers or more, for example, in the range of100 to 150 micrometers. If the depth T0 of the second upper recess 12 isgreater than the range, the hardness of the frames 111 and 112 may belowered. If the depth T0 of the second upper recess 12 is less than therange, the bonding strength of the resin may be lowered and the resinmay be a thinner, which may be degraded by the reflection efficiency.The thickness T1 of the first and second frames 111 and 112 may be thethickness a of the frames 111 and 112 described with reference to FIG.5.

Referring to FIGS. 18 and 19, the width b5 of the first upper recess 11in the first direction may be greater than the width of the seconddirection based on the first flat portion Q1. The width b5 of the firstupper recess 11 in the first direction may be 800 micrometers or more,for example, in a range of 800 to 1400 micrometers. Due the width b5,the first upper recess 11 may overlap a portion of the second sideportion 134 or the side surface of the cavity in the third direction andmay be provided a space for forming of the first side portion 132 andthe groove portion 133A.

Referring to FIGS. 18 and 20, the width of the second upper recess 12 inthe first direction may be greater than the width of the seconddirection based on the second flat portion Q2. The width of the secondupper recess 12 in the first direction may be 800 micrometers or more,for example, in a range of 800 to 1400 micrometers. Due to the width,the second upper recess 12 may overlap a portion of the second sideportion 134 in the third direction, and may provide a space for formingthe second side portion 134 and the groove portion 133A.

The first and second frames 111 and 112 may have the same thickness. Thefirst flat portion Q1 and the second flat portion Q2 may have the samethickness. The first and second upper recesses 11 and 12 may be regionsrecessed to the same depth T0.

The first upper recess 11 and the second upper recess 12 may beconnected to each other. In the body 113, a thickness of a regiondisposed between the first flat portion Q1 and the second flat portionQ2 may be thicker than a thickness of a region disposed between thefirst and second upper recesses 11 and 12. That is, since the body 113disposed between the first and second upper recesses 11 and 12 isdisposed between the frames supporting the first and second upperrecesses 11 and 12, a thickness of the body disposed between the firstand second upper recesses 11 and 12 may be thinner than the thickness ofthe body 113 disposed between the first and second flat portions Q1 andQ2. Accordingly, the first and second upper recesses 11 and 12 may beconnected to each other. An upper direction of the first upper recess 11may be opened, and a region between the first and second frames 111 and112 may be opened. That is, the first upper recess 11 may be openedtoward the body 113. An upper direction of the second upper recess 12may be open, and the region between the first and second frames 111 and112 may be opened. That is, the second upper recess 12 may be openedtoward the body 113.

Referring to FIGS. 16 and 19, the first and second frames 111 and 112may include a region where at least one portion of the first and secondframes 111 and 112 is exposed on the bottom surface of the grooveportion 133A. The region of the first and second frames 111 and 112exposed to the groove portion 133A may be a region in which theprotection device 125 is disposed. The first frame 111 may include aregion exposed to the groove portion 133A, and may include, for example,a first region Q11 and a second region Q12. The first region Q11 and thesecond region Q12 may be spaced apart in the second direction from theoutside of the first flat portion Q1. The first and second regions Q11and Q12 may be disposed outside of the first upper recess 11 in thesecond direction and exposed to the bottom of the cavity 102. Aninterval between the first and second regions Q11 and Q12 may be greaterthan a length in the second direction of the first flat portion Q1. Aninterval between the first and second regions Q11 and Q12 may be smallerthan the bottom width a2 of the cavity 102 in the second direction. Thebottom width b2 in the first direction of the cavity 102 may be equal toor larger than a2. The bottom widths a2 and b2 may be 2 mm or more, forexample, in the range of 2 mm to 3 mm.

The first and second regions Q11 and Q12 may be parts in which the upperportion of the first frame 111 is exposed from the bottom of the cavity102. The width a3 in the second direction of the first and secondregions Q11 and Q12 may be wider than the bottom width of the protectiondevice 125, for example, 100 micrometers or more, or in a range of 100to 200 micrometers. The length of the first and second regions Q11 andQ12 in the first direction may be longer than the width of the first andsecond regions Q11 and Q12. The first region Q11 and the second regionQ12 may be disposed to face each other. Both side surfaces of the firstflat portion Q1 may be disposed to face the first region Q11 and thesecond region Q12.

The second frame 111 may include a region exposed to the groove portion133A, and may include, for example, a third region Q21 and a fourthregion Q22. The third region Q21 and the fourth region Q22 may be spacedapart in the second direction from the outside of the second flatportion Q2. The third and fourth regions Q21 and Q22 may be disposedoutside the second direction of the second upper recess 12 and exposedto the bottom of the cavity 102. An interval between the third andfourth regions Q21 and Q22 may be greater than a length in the seconddirection of the second flat portion Q2. An interval between the thirdand fourth regions Q21 and Q22 may be smaller than the bottom width a2of the cavity 102 in the second direction. The third and fourth regionsQ21 and Q22 may be parts in which the upper portion of the second frame112 is exposed from the bottom of the cavity 102. The width a3 in thesecond direction of the third and fourth regions Q21 and Q22 may bewider than the bottom width of the protection device 125, and may be,for example, 100 micrometers or more, or in a range of 100 to 200micrometers. The length of the third and fourth regions Q21 and Q22 inthe first direction may be longer than the width of the third and fourthregions Q21 and Q22. The third region Q21 and the fourth region Q22 maybe disposed to face each other. Both side surfaces of the second flatportion Q2 may be disposed to face the third region Q21 and the fourthregion Q22.

In the first and second frames 111 and 112, the first region Q11 and thethird region Q21 may correspond to each other, and the second region Q12and the fourth region Q22 may correspond to each other. The protectiondevice 125 may be disposed on at least one of the first to fourthregions Q11, Q12, Q13, and Q14 of the first and second frames 111 and112. For example, the protection device 125 may be disposed on the firstregion Q11 and may be connected to the third region Q21 by a wire 126.The protection device 125 may be electrically connected to the first andsecond frames 111 and 112.

According to an embodiment, since the first to fourth regions Q11, Q12,Q13, and Q14 of the first and second frames 111 and 112 may be exposedon the bottom of the cavity 102, the second width of the bottom of thecavity 102 made be wider and a space for embedding the protection device125 may be provided.

The first frame 111 may have hole structures 116 and 117 around theperiphery of the first upper recess 11, and the hole structures 116 and117 may be formed in an outward direction from boundary regions of thefirst upper recess 11 and may be stably coupled to the reflectiveportion 110A. The depths of the hole structures 116 and 117 disposed inthe first upper recesses 11 may be provided at different depths fromportions in contact with the first frame 111 and portions in contactwith the first upper recesses 11.

The second frame 112 may have hole structures 118 and 119 around theperiphery of the second upper recess 12, and the hole structures 118 and119 disposed in the first upper recess 11 may be formed in an outwarddirection from boundary region of the second upper recess 12 and may bestably coupled to the reflective portion 110A. The depths of the holestructures 118 and 119 disposed in the second upper recess 12 may bedifferent from the depths of the portions in contact with the secondframe 112 and the portions in contact with the second upper recesses 12.

The hole structures 116, 117, 118 and 119 disposed in the first andsecond upper recesses 11 and 12 may be disposed at corners of the bottomof the cavity, respectively. Here, when a bottom shape of the cavity isa polygon or ellipse shape, the hole structures 116, 117, 118, and 119may be disposed at each corner direction of the package body 110. Thehole structures 116, 117, 118, and 119 may be holes penetrating from theupper surface of the frame 111, 112 to the lower surface thereof.

Referring to FIGS. 18 to 21, the light emitting device package includesa first side portion 132 of the cavity 102. The first side portion 132may be disposed around the first flat portion Q1 and the second flatportion Q2. The first side portion 132 may be disposed on the first andsecond upper recesses 11 and 12. The first side portion 132 may beconnected to the body 113 or may be integrally formed. The first sideportion 132 may be formed of one body with the body 113 and thereflective portion 110A.

The first side portion 132 may protrude higher than the upper surfacesof the first and second flat portions Q1 and Q2. The first side portion132 may protrude higher than the upper surface of the body 113 disposedbetween the first and second flat portions Q1 and Q2. The first sideportion 132 may have an open region in which the light emitting device120 is disposed, and the first and second flat portions Q1 and Q2 may beexposed in the open region. The upper surface of the body 113 betweenthe first and second flat portions Q1 and Q2 may be exposed in the openregion of the first side portion 132. The body 113 may overlap with thelight emitting device 120 in the third direction. The length a0 in thefirst direction of the open region may be equal to or greater than thelength of the first direction of the light emitting device 120, and maybe, for example, 1200 micrometers or more, for example, in the range of1200 to 1700 micrometers. The length a1 in the second direction of theopen region may be smaller than the length a0 in the first direction andmay be 1000 micrometers or less, for example, in the range of 900 to1000 micrometers. The size of the open region may correspond to the sizeof the light emitting device 120 and may have a difference of 10 to 60micrometers from the length of each side of the light emitting device120.

The stepped portion 131 disposed around the outer peripheries of thefirst and second flat portions Q1 and Q2 is disposed at the first sideportion 132, a bottom of the stepped portion 131 may be disposed lowerthan the lower surface of the light emitting device 120, and the steppedportion 131 may be disposed to overlap the periphery of the lowersurface of the light emitting device 120 in the third direction. Thebottom of the stepped portion 131 may extend from the first and secondflat portions Q1 and Q2 to the same height as the top surface of theflat portions Q1 and Q2. The width b6 of the stepped portion 131 may bedisposed in the range of 30 micrometers or more, for example, in a rangeof 30 to 70 micrometers. Since the width b6 of the stepped portion 131is disposed in the range, an insertion of the light emitting device 120overlapping the stepped portion 131 may be guided, and it is possible toprevent foreign substances from occurring on the surfaces of the flatportions Q1 and Q2.

Referring to FIGS. 18 and 21, the first side portion 132 may be disposedalong the lower periphery of the light emitting device 120 disposed onthe first and second flat portions Q1 and Q2. The upper surface S2 ofthe first side portion 132 may be disposed as an inclined surface on thelower outer side of the light emitting device 120 disposed on the firstand second flat portions Q1 and Q2. The height T0 of the first sideportion 132 is 50 micrometers or more, for example, in a range of 50 to200 micrometers from the upper surfaces S2 of the first and secondframes 111 and 112 or the upper surfaces of the flat portions Q1 and Q2.Since the first side portion 132 may face the semiconductor layer 123 onthe outside of the light emitting device 120, the first side portion 132may be reflected the light incident on the side surface of thesemiconductor layer 123. Accordingly, the light reflection efficiencymay be improved. By protruding the first side portion 132 with theheight T0, it is possible to prevent the resin 135 from overflowing tothe outside of the first side portion 132. The distance from the lightemitting device 120 to the first side portion 132 may gradually increaseas the upper portion of the first side portion 132 progresses, therebyimproving light reflection efficiency.

The first side portion 132 may include a bottom portion 133 extending inan outward direction along the first and second upper recesses 11 and12. The bottom portion 133 may be disposed in the first upper recess 11and may be connected to the reflective portion 110A and the body 113.

The light emitting device package 100 includes a second resin 135. Thesecond resin 135 is disposed around the first side portion 132. Thesecond resin 135 may be disposed on the surface of the first sideportion 132. The second resin 135 surrounds the outer periphery of thefirst side portion 132. The second resin 135 may be disposed on thegroove portion 133A. The second resin 135 may be disposed on the bottomportion 133 of the first side portion 132.

The second resin 135 has a reflectance different from that of the firstside portion 132. The second resin 135 may be formed of a materialdifferent from that of the first side portion 132. The first sideportion 132 may include, for example, an epoxy material or a resinmaterial such as PPA, and the second resin 135 may include a siliconmaterial. The second resin 135 may include, for example, at least one ofan epoxy-based material, a silicon-based material, a hybrid materialincluding an epoxy-based material and a silicon-based material. Thesecond resin 135 may be made of a material having a higher reflectancethan the first side portion 132. Impurities such as at least one metaloxide filler of TiO2, SiO2, and Al2O3 may be added to the first sideportion 132. Impurities such as TiO2, SiO2, and Al2O3 may be added tothe second resin 135. When the same impurities are added to the firstside portion 132 and the second resin 135, the impurity content of thesecond resin 135 may be higher than that of the first side portion 132.The second resin 135 may be made of white silicon.

As shown in FIG. 18, the first side portion 132 and the second resin 135may be in contact with each other by using a resin material, therebyincreasing adhesion. The second resin 135 may be spaced apart from thelight emitting device 120. The distance b4 between the second resin 135and the light emitting device 120 may be spaced apart in a range of 200micrometers or more, for example, in a range of 200 to 400 micrometers.When the distance b4 is within the above range, the width of the firstside portion 132 may be secured to perform a dam function. When thedistance b4 is larger than the range, the surface area of the secondresin 135 may be reduced. Therefore, the improvement of the lightefficiency may be insignificant. The width b3 of the second resin 135disposed in the groove portion 133A may be disposed in a range of 200micrometers or more, for example, 200 to 500 micrometers. When the widthb3 of the second resin 135 is in the above range, the surfacereflectance may be improved and a contact area between the first sideportion 132 and the side surface of the cavity may be secured. The widthb3 of the second resin 135 may be a straight line distance from theupper or lower portion. The first side portion 132 may be disposedbetween the second resin 135 and the light emitting device 120 toprevent the second resin 135 from contacting the light emitting device120. Accordingly, when the second resin 135 is formed around the lightemitting device 120, the second resin 135 prevents a problem of forminga fillet along the side surface of the light emitting device 120,thereby reducing light loss.

As shown in FIG. 18, a concave groove portion 133A is disposed betweenthe first side portion 132 and the second side portion 134 of the cavity102, and the second resin 135 is disposed in the groove portion 133A.The width of the groove portion 133A may be the same as the lower widthof the second resin 135. As shown in FIG. 21, the upper surface S3 ofthe second resin 135 may be connected between a lower part of the uppersurface S1 of the second side portion 134 of the cavity 102 and an upperpart of the upper surface S2 of the first side portion 132. Theinclination angle of the upper surface S2 of the first side portion 132may be greater than or equal to the inclination angle of the uppersurface S3 of the second resin 135. Here, the inclination angle of theupper surface S1 of the second side portion 134 of the cavity 102 may be40 degrees or more, for example, in a range of 40 to 60 degrees withrespect to the straight line in the first direction. Accordingly, theupper surface S2 of the first side portion 132 may effectively reflectthe light emitted to the lower portion of the light emitting device 120by the inclination angle.

As shown in FIG. 15, the second resin 135 may be disposed on the firstto fourth regions Q11, Q12, Q13, and Q14 of the first and second frames111 and 112. The second resin 135 covers the protection device 125 andthe wire 126 disposed on the first to fourth regions Q11, Q12, Q13, andQ14. Accordingly, the protection device 125 is embedded in the secondresin 135 to reduce the absorption loss of the light emitted from thelight emitting device 120.

A height of the upper surface of the second resin 135 may be at leasthigher than a height of the upper surface of the first side portion 132.The minimum thickness of the second resin 135 may be the depth of thegroove portion 133A or the height T0 of the first side portion 132, andthe maximum thickness may be the same as a lower part of the sidesurface of the cavity 102 in the second direction.

The second resin 135 may be disposed to be in non-contact with the firstand second flat portions Q1 and Q2 and the light emitting device 120,thereby preventing the light emitting device 120 from being affected. Asshown in FIG. 21, the upper surface S3 of the second resin 135 isdisposed to be inclined in the inclined direction of the upper surfaceS2 of the first side portion 132, thereby reflecting light emitted fromthe light emitting device 120. An upper surface area or width of thesecond resin 135 may be wider than an upper surface area or width of thefirst side portion 132. The upper surface area or width of the firstside portion 132 may be a portion protruding around the first and secondflat portions Q1 and Q2. A part of the second resin 135 may overlap theupper surface (S3 of FIG. 21) of the second side portion 134 of thecavity 102 in the third direction.

Since the first side portion 132, the second side portion 134, and thesecond resin 135 which are different from each other and have a multipledam structures are arranged around the light emitting device 120, theside surface of the light emitting device 120 may be exposed from thefirst side portion 132, the second side portion 134 and the second resin135, thereby improving the light extraction efficiency and improving thereflection efficiency of the side light of the light emitting device120.

FIG. 16 is a view excluding the second reflecting unit and the lightemitting device from the light emitting device package of FIG. 15.Referring to FIG. 16, the first and second flat portions Q1 and Q2 mayhave a greater length in the second direction than the width in thefirst direction. Since the light emitting device 120 has a long lengthin the long side direction, the first and second flat portions Q1 and Q2may provide a long length in the short side direction, therebyincreasing the bonding area with each bonding portion. The firstdirection may be a horizontal direction, a long side direction of thepackage body 110, or a direction in which the two frames 111 and 112 arespaced apart from each other. The second direction may be a longitudinaldirection, a short side direction of the package body 110, or adirection in which the body 113 between the two frames 111 and 112extends.

Referring to FIGS. 15 and 17, the first flat portion Q1 may be disposedunder the first bonding portion 121 of the light emitting device 120.The first flat portion Q1 may be provided to overlap the first bondingportion 121 of the light emitting device 120 in the third direction. Thefirst flat portion Q1 may be provided to overlap the first bondingportion 121 of the light emitting device 120 in the third direction fromthe top surface of the first frame 111 to the lower surface.

A top view shape of the first and second flat portions Q1 and Q2 mayhave a polygonal shape, an ellipse shape, or a circular shape. The firstand second flat portions Q1 and Q2 may have a structure having a curvedsurface or an inclined surface around the upper portion thereof.Accordingly, the body 113 disposed between the first and second flatportions Q1 and Q2 may have an upper width wider than a lower width.

The second flat portion Q2 may be provided in the second frame 112. Thesecond flat portion Q2 may protrude from the second frame 112. Thesecond flat portion Q2 may be provided to protrude from the upper andlower surfaces of the second frame 112 in the third direction.

An interval between the upper surface of the first flat portion Q1 andthe upper surface of the second flat portion Q2 may be greater than orequal to the width of the body 113 and may be provided, for example, 150micrometers or more, for example, in a range of 150 to 500 micrometers.Accordingly, an electrical stable distance between the first and secondflat portions Q1 and Q2 may be secured. The lower surfaces of the firstand second flat portions Q1 and Q2 may be formed as flat surfaces, andmay be bonded to the circuit board through the lower surfaces of thefirst and second frames 111 and 112.

When the light emitting device package 100 according to the embodimentis later mounted on a circuit board or a sub-mount, the interval betweenthe second flat portion Q2 and the second flat portion Q2 on regions ofthe lower surfaces of the first frame 111 and the second frame 112 maybe selected to be provided over a predetermined distance to prevent anelectrical short between the pads.

The conductive layer is between the first flat portion Q1 of the firstframe 111 and the first bonding portion 121 of the light emitting device120, and between the second flat portion Q2 of the second frame 112 andthe second bonding portion of the light emitting device 120,respectively. The conductive layer may be bonded to the first and secondbonding portions 127 and 129 in the upper regions of the first andsecond flat portions Q1 and Q2. A portion of the conductive layer may bedisposed around the lower parts of the first and second flat portions Q1and Q2. The conductive layer may include one material or alloy selectedfrom the group including Ag, Au, Pt, Sn, Cu, or the like. At least oneof the flat portions Q1 and Q2 and the bonding portions 121 and 122 ofeach of the frames 111 and 112 may be combined with a compound in whicha material constituting thereof and the material of the conductive layeris combined. The compound may include at least one of CuxSny, AgxSny,and AuxSny, and may satisfy a condition of 0<x<1, y=1-x, and x>y.

An intermetallic compound (IMC) may be formed between the conductivelayer and the frame 120, during the bonding portions 121 and 122 of thelight emitting device 120 with a material constituting the conductivelayer is process of forming the conductive layer or the heat treatmentprocess after the conductive layer is provided. For example, theconductive layer may be formed using a conductive paste. The conductivepaste may include a solder paste, a silver paste, or the like, and mayinclude a multilayer or a single layer composed of a multilayer or analloy composed of different materials. For example, the conductive layermay include an SAC (Sn—Ag—Cu) material.

For example, an alloy layer may be formed by bonding between a materialconstituting the conductive layers and a metal of the frames 111 and112. Accordingly, the conductive layers 127 and 129 and the frames 111and 112 may be physically and electrically stably coupled. Theconductive layers 127 and 129, the alloy layer and the frame may becombined physically and electrically stably. The alloy layer may includeat least one intermetallic compound layer selected from the groupincluding AgSn, CuSn, AuSn, and the like. The intermetallic compoundlayer may be formed by combining a first material and a second material,the first material may be provided from a conductive layers 127 and 129,and the second material may be provided from the bonding portions 121and 122 or the frames 111 and 112.

The light emitting device package 101 may be mounted on a sub-mount or acircuit board. However, in the conventional light emitting devicepackage is mounted on the sub-mount or the circuit board, a hightemperature process such as a reflow may be applied. At this time, inthe reflow process, a re-melting phenomenon occurs in the bonding regionbetween the lead frame and the light emitting device provided in thelight emitting device package, thereby weakening the stability of theelectrical connection and the physical coupling.

However, the first bonding portion 121 and the second bonding portion122 of the light emitting device according to the embodiment may beprovided with driving power through the flat portions Q1 and Q2 and theconductive layer. The melting point of the conductive layer may beselected to have a higher value than the melting point of other bondingmaterials. Therefore, since the light emitting device package 101according to the embodiment does not cause a re-melting phenomenon evenwhen bonded to a main substrate through a reflow process, there is anadvantage that electrical connection and physical bonding force may notbe degraded. In addition, according to the light emitting device package101 according to the embodiment, the package body 110 does not need tobe exposed to high temperatures in the process of manufacturing thelight emitting device package. Therefore, according to the embodiment,the package body 110 may be prevented from being damaged or discoloreddue to exposure to high temperature.

Accordingly, the selection range for the material constituting the body113 may be widened. According to an embodiment, the body 113 may beprovided using a relatively inexpensive resin material as well as anexpensive material such as a ceramic. For example, the body 113 includesat least one material selected from the group consisting of aPolyphthalamide (PPA) resin, a polycyclohexylenedimethyleneterephthalate (PCT) resin, an epoxy molding compound (EMC) resin, and asilicone molding compound (SMC) resin.

Referring to FIGS. 18 to 21, the molding portion 140 may be disposed inthe cavity 102. The molding portion 140 may be provided on the lightemitting device 120, the first side portion 132, and the second resin135. The molding portion 140 may be disposed on the first frame 111 andthe second frame 112. The molding portion 140 may be provided on theside surface of the cavity 102. The molding portion 140 may be disposedon the first side portion 132 and the second resin 135 and may contactthe side surface of the light emitting device 120. The molding portion140 may contact the lower surface of the light emitting device 120.

The molding portion 140 may include an insulating material. In addition,the molding portion 140 may include wavelength conversion means forreceiving the light emitted from the light emitting device 120 andproviding the wavelength-converted light. For example, the moldingportion 140 may be at least one selected from the group includingphosphors, quantum dots, and the like. The molding portion 140 may beformed as a single layer or a multilayer, and in the case of amultilayer, any one layer may be free of impurities such as phosphors,and the other layer may have impurities such as phosphors.

According to the embodiment, a half etching process is performed onupper portions of the frames 111 and 112 to form a first dam portion 132and a second resin 135 having a reflection characteristic having adouble dam structure or a continuous loop or frame shape. The problem ofinhibiting side light extraction from the light emitting device 120 maybe prevented by the first side portion 132 and the second resin 135having reflective characteristics. Therefore, the light extractionefficiency of the light emitting device package may be improved.

FIG. 22 illustrates a first modified example of the first side portionof the light emitting device package of FIG. 15. The same configurationas the configuration of the embodiment disclosed above will be referredto the above configuration and description, and detailed descriptionthereof will be omitted.

Referring to FIG. 22, the first side portion 132 may have a shape inwhich a protruding structure is a discontinuous. A first opening 113Amay be disposed in the first side portion 132, and the first opening113A may overlap the body 113 in the third direction. The width of thefirst opening 113A in the first direction may be equal to or larger thanthe width of the body 113. The first opening 113A may be opened in anarea between the light emitting device 120 and the first and thirdregions Q11 and Q21 of the first and second frames 111 and 112.Accordingly, a portion 135A of the second resin 135 disposed around thefirst side portion 132 may extend through the first opening 113A. Theportion 135A of the second resin 135 may be disposed under the lightemitting device 120. The portion 135A of the second resin 135 may bedisposed between the region between the first and second planar portionsQ1 and Q2 and the light emitting device 120. The portion 135A of thesecond resin 135 may be disposed between the body 113 and the lightemitting device 120. In this case, even if the second resin 135 rides onthe side surface of the light emitting device 120, the second resin 135may affect a minute portion, thereby minimizing the influence on otherside light extraction. Alternatively, the first opening 113A may bedisposed to have the same depth as the first and second upper recesses,and in this case, influence of the portion 135A of the second resin 135on the side surface of the light emitting device 120 may be minimized.

FIG. 23 illustrates a second modified example of the first side portionof the light emitting device package of FIG. 15. The same configurationas the configuration of the embodiment disclosed above will be referredto the above configuration and description, and detailed descriptionthereof will be omitted.

Referring to FIG. 23, the first side portion 132 may have a shape inwhich a protruding structure is discontinuous. A plurality of openingsmay be disposed in the first side portion 132, and the plurality ofopenings may include first and second openings 113A and 113B disposed onopposite sides of the light emitting device 120. The first and secondopenings 113A and 113B may overlap the body 113 in the third direction.The width in the first direction of the first and second openings 113Aand 113B may be equal to or larger than the width of the body 113disposed between the frames 111 and 113. The first opening 113A may beopened in an area between the light emitting device 120 and the firstand third regions Q11 and Q21 of the first and second frames 111 and112. The second opening 113B may be opened in an area between the lightemitting device 120 and the second and fourth regions Q12 and Q22 of thefirst and second frames 111 and 112. Accordingly, portions 135A and 135Bof the second resin 135 disposed around the first side portion 132 mayextend through the first and second openings 113A and 113B. The portions135A and 135B of the second resin 135 may be disposed under the lightemitting device 120. The portions 135A and 135B of the second resin 135may be disposed between the region between the first and second planarportions Q1 and Q2 and the light emitting device 120. The portion of thesecond resin 135 may be disposed between the body 113 and the lightemitting device 120. In this case, even if the second resin 135 rides onthe side surface of the light emitting device 120, the second resin 135may affect a minute portion, thereby minimizing the influence on otherside light extraction. Alternatively, the first and second openings maybe disposed to have the same depth as the first and second upperrecesses 11 and 12 of FIG. 17, and in this case, a part 135A of thesecond resin 135 may be disposed. Influence of the portions 135A and135B of the second resin 135 on the side surface of the light emittingdevice 120 may be minimized.

FIGS. 24 and 25 are other examples of the body of the light emittingdevice package of FIG. 17. In the description of FIGS. 24 and 25, theabove-described configuration may be selectively applied, and detaileddescription thereof will be omitted.

Referring to FIG. 24, the light emitting device package may include arecess R in at least one or both of the frames 111 and 112 and the body113. The recess R may be provided in the body 113, for example. Therecess R may be provided between the first flat portion Q1 and thesecond flat portion Q2. The recess R may be recessed in a direction ofthe lower surface from the upper surface of the body 113. The recess Rmay be disposed under the light emitting device 120. The recess R mayoverlap the light emitting device 120 in the third direction.

The first resin 130 may be disposed in the recess R. The first resin 130may be disposed between the light emitting device 120 and the body 113.The first resin 130 may be disposed between the first bonding portion121 and the second bonding portion 122. For example, the first resin 130may be disposed in contact with a side surface of the first bondingportion 121 and a side surface of the second bonding portion 122.

The first resin 130 is fixed to the recess R and may provide a stablefixing force between the light emitting device 120 and the package body110. The area of the first resin 130 bonded to the resin material of thebody 113 is increased to provide a stable fixing force between the lightemitting device 120 and the body 113. For example, the first resin 130may be disposed in direct contact with the upper surface of the body113. In addition, the first resin 130 may be disposed in direct contactwith the lower surface of the light emitting device 120.

For example, the first resin 130 may be a reflective material or a lightdiffusing material, with reference to the materials and functionsdisclosed in the first embodiment.

According to an embodiment, the depth of the recess R may be smallerthan the thickness of the frames 111 and 112. The depth of the recess Rmay be determined in consideration of the adhesive force of the firstresin 130. In addition, the depth of the recess R may be determined soas not to generate cracks in the lighting device package 100 byconsidering the stable strength of the body 113 and/or the heat emittedfrom the light emitting device 120.

The recess R may provide a proper space under the light emitting device120 in which a kind of underfill process may be performed. Here, theunderfill process may be a process of disposing the light emittingdevice 120 on the package body 110 and disposing the first resin 130under the light emitting device 120. In the process of mounting thelight emitting device 120 on the package body 110, the first resin 130is disposed in the recess R to be mounted the light emitting devicethrough the first resin 130, and then a process of the mounting thelight emitting device 120 is disposed. The recess R may be provided tobe greater than or equal to a first depth so that the first resin 130 issufficiently provided between the lower surface of the light emittingdevice 120 and the upper surface of the body 113. In addition, therecess R may be provided under a second depth in order to provide stablestrength of the body 113. The depth of the recess R may be provided from40 micrometers to 60 micrometers.

The width in the first direction of the recess R may be smaller than theinterval between the frames 111 and 112. The width of the recess R maybe provided in the long axis direction of the light emitting device 120.The width in the first direction of the recess R may be smaller than thewidth in the first direction of the flat portions Q1 and Q2. The depthand width of the recess R may be determined so that sufficient fixingforce may be provided by the first resin 130 disposed between the body113 and the light emitting device 120. For example, the width of therecess R may be provided to 140 micrometers to 160 micrometers.

The length of the recess R in the second direction may be longer thanthe length of the light emitting device 120 in the short axis direction.In this case, the first resin 130 is exposed to the outside of the lightemitting device 120 and may be performed the light reflection function.The length of the recess R in the second direction may be smaller thanthe length of the long axis of the light emitting device 120, and inthis case, the lower surface of the light emitting device 120 may bebonded to the first resin 130. The length of the recess R in the seconddirection may be disposed in the open area of the first side portion 132or may be in contact with the first side portion 132.

According to the embodiment, the thickness of the first resin 130 may besecured through the interval between the light emitting device 120 andthe upper surface of the body 113, thereby enhancing the lower adhesiveforce and the supporting force of the light emitting device 120. Thefirst resin 130 may be connected to or separated from the second resin135. The first resin 130 may function as an adhesive. The first resin130 may be used as a bonding process after adhering the light emittingdevice 120.

In the light emitting device package according to the embodiment, arecess may be further disposed with the hole structures in the lowerportions of the frames 111 and 112 to strengthen the coupling with thebody 113. In addition, by arranging the stepped structure in the lowerportion of the frames 111 and 112, it is possible to strengthen thecoupling with the body 113 and to control the spreading of the solder.

Referring to FIG. 25, the light emitting device package may includethrough holes in at least one or both of the frames 111 and 112 and thebody 113. The through hole 13 may be provided in, for example, the body113. The through hole 13 may correspond to the through hole 115Aprovided in FIG. 9.

The through hole 13 may be provided between the first flat portion Q1and the second flat portion Q2. The through hole 13 may be provided topenetrate from the upper surface of the body 113 to the lower surface.The through hole 13 may be disposed under the light emitting device 120.The through hole 13 may be provided to overlap the light emitting device120 in the third direction.

The first resin 130 may be disposed in the through hole 13. The firstresin 130 may be disposed between the light emitting device 120 and thebody 113. The first resin 130 may be disposed between the first bondingportion 121 and the second bonding portion 122. For example, the firstresin 130 may be disposed in contact with a side surface of the firstbonding portion 121 and a side surface of the second bonding portion122. When the first resin 130 is formed, the first resin 130 may beformed in the through hole 13 after the support sheet is disposed on thebottom of the package body 110.

The first resin 130 may be disposed on the through hole 13 and the body113 to provide a stable fixing force between the light emitting device120 and the package body 110. The area of the first resin 130 bonded tothe resin material of the body 113 is increased to provide a stablefixing force between the light emitting device 120 and the body 113. Forexample, the first resin 130 may be disposed in direct contact with theupper surface of the body 113. In addition, the first resin 130 may bedisposed in direct contact with the lower surface of the light emittingdevice 120.

For example, the first and second resins 130 and 135 may include atleast one of an epoxy-based material, a silicon-based material, a hybridmaterial including an epoxy-based material and a silicon-based material.It may include. As another example, when the first and second resins 130and 135 include a reflection function, the first and second resins 130and 135 may include white silicone. The first and second resins 130 and135 may be formed of a thermally conductive material for dissipatingheat downward as well as an adhesive function. In this case, the contentof metal oxides may be increased and disposed in the first and secondresins 130 and 135. The first and second resins 130 and 135 will bereferred to the description of the first embodiment.

According to an embodiment, the depth of the through hole 13 may beequal to the thickness of the frames 111 and 112. The width of thethrough hole 13 may be determined in consideration of the stablestrength of the body 113 and/or to prevent cracks in the light emittingdevice package due to heat emitted from the light emitting device 120.

The width of the through hole 13 in the first direction may be smallerthan the gap between the frames 111 and 112. The width of the throughhole 13 may be provided in the long axis direction of the light emittingdevice 120. The width in the first direction of the through hole 13 maybe smaller than the width in the first direction of the flat portions Q1and Q2. The length of the through hole 13 may be smaller or larger thanthe length of the light emitting device 120 in the long axis direction,for example, the length of the second direction.

The first resin 130 may strengthen the lower adhesive force and thesupport force of the light emitting device 120. In addition, thethickness of the first resin 130 may be increased through the intervalbetween the light emitting device 120 and the frames 111 and 112,thereby preventing a short problem on the side surface of the lightemitting device 120. In addition, the light reflection efficiency by thefirst resin 130 may be improved.

Referring to FIGS. 26 to 29 are views illustrating a method ofmanufacturing the light emitting device package of FIG. 15.

Referring to FIG. 26, the first and second frames 111 and 113 mayprovide a lower recess in an outer direction of the flat portion. Afirst side portion 132 may be formed in the lower recess. The first sideportion 132 may be connected to or integrally formed with the body 113disposed between the first and second frames 111 and 112. The first sideportion 132 may be connected to or integrally formed with the reflectiveportion and the body 113. The first side portion 132, the reflectiveportion and the body 113 may be formed on the frame by an injectionmolding process.

As shown in FIG. 16, the groove portion between the first side portion132 and the reflective portion may be formed in a continuous loop shape.The bottom of the groove portion may be disposed at the same height asthe upper surfaces of the first and second flat portions Q1 and Q2. Thatis, the bottom of the connection part of the first side portion 132 isdisposed at the same height as the upper surfaces of the first andsecond flat portions Q1 and Q2, thereby minimizing the step differenceon the bottom of the molding die due to the injection molding.

The first side portion 132 may be disposed outside the flat portions ofthe first and second frames 111 and 112 and may protrude higher than thetop surface of the flat portion. The inclination angles of the topsurface of the first side portion 132 and the top surface of the secondside portion 134 of the cavity may be different from each other. Theinclination angle of the upper surface S1 of the first side portion 132may be different from that the upper surface of the second side portion134 of the cavity 102. For example, an inclination angle of the topsurface S1 of the first side portion 132 may be larger than theinclination angle of the second side portion 134 of the cavity 102.Here, the inclination angle may be an angle inclined based on the bottomof a horizontal package body 110.

Referring to FIGS. 27 and 28, after facing the first and second bondingportions of the light emitting device 120 on the first and second flatportions Q1 and Q2 of the first and second frames 111 and 112, there maybe adhered with by a conductive layer. The conductive layer may bedisposed between the first flat portion Q1 of the first frame 111 andthe first bonding portion 121 of the light emitting device 120, andbetween the second flat portion Q2 of the second frame 112 and thesecond bonding portion of the light emitting device 120. The conductivelayer may be bonded to the first and second bonding portions 127 and 129on an upper region of the first and second flat portions Q1 and Q2, anda portion of the conductive layer may be disposed on a lower peripheryof the first and second flat portions Q1 and Q2. The conductive layermay include one material selected from the group including Ag, Au, Pt,Sn, Cu, or an alloy thereof. At least one of the flat portions P1 and P2and the bonding portions 121 and 122 of each of the frames 111 and 112may be combined with a compound in which a material constituting thematerial of the conductive layer is combined. The compound may includeat least one of CuxSny, AgxSny, and AuxSny, and may satisfy a conditionof 0<x<1, y=1-x, and x>y.

An intermetallic compound (IMC) may be formed between the conductivelayer and the frame 120, during the bonding portions 121 and 122 of thelight emitting device 120 with a material constituting the conductivelayer is process of forming the conductive layer or the heat treatmentprocess after the conductive layer is provided. For example, theconductive layer may be formed using a conductive paste. The conductivepaste may include a solder paste, a silver paste, or the like, and mayinclude a multilayer or a single layer composed of a multilayer or analloy composed of different materials. For example, the conductive layermay include an SAC (Sn—Ag—Cu) material.

For example, an alloy layer may be formed by bonding between a materialconstituting the conductive layer and a metal of the frames 111 and 112.Accordingly, the conductive layer and the frames 111 and 112 may bephysically and electrically stably coupled. The conductive layer, thealloy layer and the frame may be combined physically and electricallystably. The alloy layer may include at least one intermetallic compoundlayer selected from the group including AgSn, CuSn, AuSn, and the like.The intermetallic compound layer may be formed by combining a firstmaterial and a second material, the first material may be provided froma conductive layer, and the second material may be provided from thebonding portions 121 and 122 or the frames 111 and 112.

The light emitting device package 101 may be mounted on a sub-mount or acircuit board. However, in the conventional light emitting devicepackage is mounted on the sub-mount or the circuit board, a hightemperature process such as a reflow may be applied. At this time, inthe reflow process, a re-melting phenomenon occurs in the bonding regionbetween the lead frame and the light emitting device provided in thelight emitting device package, thereby weakening the stability of theelectrical connection and the physical coupling.

However, the first bonding portion 121 and the second bonding portion122 of the light emitting device according to the embodiment may beprovided with driving power through the flat portions Q1 and Q2 and theconductive layer. The melting point of the conductive layer may beselected to have a higher value than the melting point of other bondingmaterials. Therefore, since the light emitting device package 101according to the embodiment does not cause a re-melting phenomenon evenwhen bonded to a main substrate through a reflow process, there is anadvantage that electrical connection and physical bonding force may notbe degraded. In addition, according to the light emitting device package100 according to the embodiment, the package body 110 does not need tobe exposed to high temperatures in the process of manufacturing thelight emitting device package. Therefore, according to the embodiment,the package body 110 may be prevented from being damaged or discoloreddue to exposure to high temperature.

As shown in FIG. 28, the protection device 125 is disposed on the firstregion Q11 of the first frame 111, and as shown in FIG. 15, and theprotection device 125 may connected to the third region Q21 and the wire126. The first and second regions Q11 and Q12 of the first frame 111 andthe third and fourth regions Q21 and Q22 of the second frame 112 referto the configurations of FIGS. 15, 18 and 19.

As shown in FIG. 29, the second resin 135 may be disposed in the outergroove portion 133A of the first side portion 132. The second resin 135may be formed after mounting the protection device 125 and cover theprotection device 125. The second resin 135 may be disposed between thefirst side portion 132 and the surface of the second side portion 134 ofthe cavity 102 to be spaced apart from the light emitting device 120.The protection device 125 may be implemented as a thyristor, a Zenerdiode, or a transient voltage suppression (TVS), and the Zener diodeprotects the light emitting device 120 from an electro static discharge(ESD).

In the light emitting device package, when the second resin 135 isformed, the molding portion 140 may be disposed on the cavity 102. Themolding portion 140 may be provided on the light emitting device 120,the first side portion 132, and the second resin 135. The moldingportion 140 may be disposed on the first frame 111 and the second frame112. The molding portion 140 may be provided on the side surface of thecavity 102. The molding portion 140 may be disposed on the first sideportion 132 and the second resin 135 and may contact the side surface ofthe light emitting device 120. The molding portion 140 may contact thebottom surface of the light emitting device 120.

The molding portion 140 may include an insulating material. In addition,the molding portion 140 may include wavelength conversion means forreceiving the light emitted from the light emitting device 120 andproviding the wavelength-converted light. For example, the moldingportion 140 may be at least one selected from the group includingphosphors, quantum dots, and the like. The molding portion 140 may beformed as a single layer or a multilayer, and in the case of themultilayer, any one layer may be free of impurities such as phosphors,and the other layer may have impurities such as phosphors.

FIG. 30 is another example of a lighting module having the lightemitting device package according to the embodiment.

Referring to FIG. 30, one or more lighting modules may be disposed onthe circuit board 201. The circuit board 201 may be provided with apower supply circuit for controlling the driving of the light emittingdevice 120.

The package body 110 may be disposed on the circuit board 201. The firstand second frames 111 and 112 of the light emitting device package 100may be electrically connected to the circuit board 201 by conductiveadhesives 221 and 223. A plurality of pads may be disposed on an uppersurface of the circuit board 201, and the pads may be connected to thefirst and second frames 111 and 112 through the conductive adhesives 221and 223.

The light emitting device package according to the embodiment, are-melting phenomenon does not occur even when bonded to the circuitboard through a reflow process, so that the electrical connection andphysical bonding force are not degraded. According to the light emittingdevice package according to the embodiment, the package body 110 doesnot need to be exposed to high temperatures in the process ofmanufacturing the light emitting device package. Therefore, according tothe embodiment, the package body 110 may be prevented from being damagedor discolored due to exposure to high temperature.

The light emitting device package 101 according to the embodiment may bemounted on a sub-mount or the circuit board and supplied. However, inthe conventional light emitting device package is mounted on thesub-mount or the circuit board, a high temperature process such as areflow may be applied. At this time, in the reflow process, a re-meltingphenomenon occurs in the bonding region between the frame and the lightemitting device provided in the light emitting device package, therebyweakening the stability of the electrical connection and the physicalcoupling. The light emitting device package 101 according to theembodiment has an advantage in that the electrical connection and thephysical bonding force are not degraded because re-melting does notoccur even when the main substrate is bonded through a reflow process.

The light emitting device package according to the embodiment of thepresent invention may include the configuration of the first embodimentand the configuration of the second embodiment. For example, the lightemitting device package may include a protruding portion of the frameshown in FIG. 4 and an upper recess shown in FIG. 18. In addition, theflat portion of the second embodiment may be disposed on the protrudingportion of the first embodiment. For example, the light emitting devicepackage may apply the protection device shown in FIG. 15 and thestructure in which the protection device is disposed in the firstembodiment.

FIG. 31 is a plan view illustrating a light emitting device according toan embodiment of the present invention, and FIG. 32 is a cross-sectionalview taken along line F-F of the light emitting device shown in FIG. 31.

Referring to FIG. 31, the first sub-electrode 1141 and the secondbonding are disposed under the first bonding portion 1171 and the secondbonding portion 1172, but are electrically connected to the firstbonding portion 1171. A second sub-electrode 1142 electrically connectedto the portion 1172 is shown to be visible.

As shown in FIG. 32, the light emitting device 1100 according to theembodiment may include a light emitting structure 1110 disposed on asubstrate 1105. The substrate 1105 and the light emitting structure 1110may correspond to the substrate 124 and the semiconductor layer 123 ofthe light emitting device 120 disclosed in the first and secondembodiments, respectively.

The substrate 1105 may be selected from the group including a sapphiresubstrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. Forexample, the substrate 1105 may be provided as a patterned sapphiresubstrate (PSS) formed on an upper surface thereof with a concavo-convexpattern.

The light emitting structure 1110 may include a first conductivesemiconductor layer 1111, an active layer 1112, and a second conductivesemiconductor layer 1113. The active layer 1112 may be disposed betweenthe first conductive semiconductor layer 1111 and the second conductivesemiconductor layer 1113. For example, the active layer 1112 may bedisposed on the first conductive semiconductor layer 1111, and thesecond conductive semiconductor layer 1113 may be disposed on the activelayer 1112.

The light emitting device 1100 according to the embodiment may include atransparent electrode layer 1130. The transparent electrode layer 1130may increase light output by improving a current diffusion. For example,the transparent electrode layer 1130 may include at least one selectedfrom the group including a metal, metal oxide, and metal nitride. Thetransparent electrode layer 1130 may include a light transmissivematerial. The transparent electrode layer 1130 may include selected fromthe group including indium tin oxide (ITO), indium zinc oxide (IZO), IZOnitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide(IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide(IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), galliumzinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Pt,Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include areflective layer 1160. The reflective layer 1160 may include a firstreflective layer 1161, a second reflective layer 1162, and a thirdreflective layer 1163. The reflective layer 1160 may be disposed on thetransparent electrode layer 1130. The second reflective layer 1162 mayinclude a first opening h1 for exposing the transparent electrode layer1130. The second reflective layer 1162 may include a plurality of firstopenings h1 disposed on the transparent electrode layer 1130. The firstreflective layer 1161 may include second openings h2 for exposing anupper surface of the first conductive semiconductor layer 1111.

The third reflective layer 1163 may be disposed between the firstreflective layer 1161 and the second reflective layer 1162. For example,the third reflective layer 1163 may be connected to the first reflectivelayer 1161. In addition, the third reflective layer 1163 may beconnected to the second reflective layer 1162. The third reflectivelayer 1163 may be disposed while physically making direct contact withthe first reflective layer 1161 and the second reflective layer 1162.

The reflective layer 1160 according to the embodiment may make contactwith the second conductive semiconductor layer 1113 through contactholes provided in the transparent electrode layer 1130. The reflectivelayer 1160 may physically make contact with an upper surface of thesecond conductive semiconductor layer 1113 through the contact holesprovided in the transparent electrode layer 1130.

The reflective layer 1160 may be provided as an insulating reflectivelayer. For example, the reflective layer 1160 may be provided as adistributed Bragg reflector (DBR) layer. In addition, the reflectivelayer 1160 may be provided as an omni-directional reflector (ODR) layer.In addition, the reflective layer 1160 may be provided by stacking theDBR layer and the ODR layer.

The light emitting device 1100 according to the embodiment may includethe first sub-electrode 1141 and the second sub-electrode 1142. Thefirst sub-electrode 1141 may be electrically connected to the firstconductive semiconductor layer 1111 in the second opening h2. The firstsub-electrode 1141 may be disposed on the first conductive semiconductorlayer 1111. For example, according to the light emitting device 1100 ofthe embodiment, the first sub-electrode 1141 may be disposed on theupper surface of the first conductive semiconductor layer 1111 withinthe recess disposed to a partial region of the first conductivesemiconductor layer 1111 through the second conductive semiconductorlayer 1113 and the active layer 1112.

The first sub-electrode 1141 may be electrically connected to the uppersurface of the first conductive semiconductor layer 1111 through thesecond opening h2 provided in the first reflective layer 1161. Thesecond opening h2 and the recess may vertically overlap each other. Forexample, the first sub-electrode 1141 may make direct contact with theupper surface of the first conductive semiconductor layer 1111 in recessregions.

The second sub-electrode 1142 may be electrically connected to thesecond conductive semiconductor layer 1113. The second sub-electrode1142 may be disposed on the second conductive semiconductor layer 1113.According to the embodiment, the transparent electrode layer 1130 may bedisposed between the second sub-electrode 1142 and the second conductivesemiconductor layer 1113.

The second sub-electrode 1142 may be electrically connected to thesecond conductive semiconductor layer 1113 through the first opening h1provided in the second reflective layer 1162. For example, the secondsub-electrode 1142 may be electrically connected to the secondconductive semiconductor layer 1113 through the transparent electrodelayer 1130 in P regions.

The second sub-electrode 1142 may make direct contact with an uppersurface of the transparent electrode layer 1130 through a plurality offirst openings h1 provided in the second reflective layer 1162 in the Pregions. According to the embodiment, the first sub-electrode 1141 andthe second sub-electrode 1142 may have polarities to each other and maybe spaced apart from each other.

The first sub-electrode 1141 and the second sub-electrode 1142 may beformed with a structure having a single layer or multiple layers. Forexample, the first sub-electrode 1141 and the second sub-electrode 1142may be ohmic electrodes. For example, the first sub-electrode 1141 andthe second sub-electrode 1142 may include at least one or an alloyformed of at least two of ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au,Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, andHf A region R11, R12 and R13 in FIG. 32 shows to distinguish overlappingregions for each of the sub-electrodes.

The light emitting device 1100 according to the embodiment may include aprotective layer 1150. The protective layer 1150 may include thirdopenings h3 for exposing the second sub-electrode 1142. The thirdopenings h3 may be disposed corresponding to PB regions provided in thesecond sub-electrode 1142. In addition, the protective layer 1150 mayinclude fourth openings h4 for exposing the first sub-electrode 1141.The fourth openings h4 may be disposed corresponding to NB regionsprovided in the first sub-electrode 1141. The protective layer 1150 maybe disposed on the reflective layer 1160. The protective layer 1150 maybe disposed on the first reflective layer 1161, the second reflectivelayer 1162, and the third reflective layer 1163. For example, theprotective layer 1150 may be provided as an insulating material. Forexample, the protective layer 1150 may be formed of at least onematerial selected from the group including SixOy, SiOxNy, SixNy, andAlxOy.

The light emitting device 1100 according to the embodiment may includethe first bonding portion 1171 and the second bonding portion 1172disposed on the protective layer 1150. The first bonding portion 1171may be disposed on the first reflective layer 1161. In addition, thesecond bonding portion 1172 may be disposed on the second reflectivelayer 1162. The second bonding portion 1172 may be spaced apart from thefirst bonding portion 1171. The first bonding portion 1171 may makecontact with an upper surface of the first sub-electrode 1141 throughthe fourth openings h4 provided in the protective layer 1150 in the NBregions. The NB regions may be vertically offset with the second openingh2. When the plurality of NB regions and the second opening h2 arevertically offset from each other, a current injected into the firstbonding portion 1171 may be uniformly distributed in a horizontaldirection of the first sub-electrode 1141, thus the current may beuniformly injected in the NB regions.

In addition, the second bonding portion 1172 may make contact with anupper surface of the second sub-electrode 1142 through the thirdopenings h3 provided in the protective layer 1150 in the PB regions.When the PB regions and the first openings h1 are not verticallyoverlapped with each other, a current injected into the second bondingportion 1172 may be uniformly distributed in a horizontal direction ofthe second sub-electrode 1142, thus the current may be uniformlyinjected in the PB regions. Thus, according to the embodiment, becausethe power may be supplied through the regions, a current dispersioneffect can be generated and an operating voltage can be reducedaccording to the increase of a contact area and the dispersion of acontact region.

Accordingly, the first reflective layer 1161 and the second reflectivelayer 1162 reflect light emitted from the active layer 1112 of the lightemitting structure 1110 to minimize the optical absorption in the firstsub-electrode 1141 and the second sub-electrode 1142, so that lightintensity Po can be improved. The first reflective layer 1161 and thesecond reflective layer 1162 may have a DBR structure in which materialshaving different refractive indexes are alternately disposed. Forexample, the first reflective layer 1161 and the second reflective layer1162 may be disposed in a single layer or a stacked structure includingat least one of TiO2, SiO2, Ta2O5, and HfO2. Without the limitationthereto, according to another embodiment, the first reflective layer1161 and the second reflective layer 1162 may freely selected to adjustthe reflectivity to the light emitted from the active layer 1112according to a wavelength of the light emitted from the active layer1112. In addition, according to another embodiment, the first reflectivelayer 1161 and the second reflective layer 1162 may be provided as theODR layer. According to still another embodiment, the first reflectivelayer 1161 and the second reflective layer 1162 may be provided as asort of hybrid type in which the DBR layer and the ODR layer arestacked.

When the light emitting device according to the embodiment isimplemented as a light emitting device package after being mounted by aflip chip bonding scheme, light provided from the light emittingstructure 1110 may be emitted through the substrate 1105. The lightemitted from the light emitting structure 1110 may be reflected by thefirst reflective layer 1161 and the second reflective layer 1162 andemitted toward the substrate 1105.

In addition, the light emitted from the light emitting structure 1110may be emitted in the lateral direction of the light emitting structure1110. In addition, the light emitted from the light emitting structure1110 may be emitted to the outside through a region where the thirdreflective layer 1163 is not provided among the surfaces on which thefirst bonding portion 1171 and the second bonding portion 1172 aredisposed.

Accordingly, the light emitting device 1100 according to the embodimentmay emit the light in six-surfaced directions surrounding the lightemitting structure 1110, and remarkably improve the light intensity.

Meanwhile, according to the light emitting device of the embodiment,when viewed from the top of the light emitting device 1100, the sum ofthe areas of the first bonding portion 1171 and the second bondingportion 1172 is less than or equal to 60% of the total area of the uppersurface of the light emitting device 1100 on which the first bondingportion 1171 and the second bonding portion 1172 are disposed.

For example, the total area of the upper surface of the light emittingdevice 1100 may correspond to the area defined by a lateral length and alongitudinal length of the lower surface of the first conductivesemiconductor layer 1111 of the light emitting structure 1110. Inaddition, the total area of the upper surface of the light emittingdevice 1100 may correspond to the area of an upper surface or a lowersurface of the substrate 1105.

Accordingly, the sum of the areas of the first bonding portion 1171 andthe second bonding portion 1172 is equal to or less than 60% of thetotal area of the light emitting device 1100, so that the amount oflight emitted to the surface on which the first bonding portion 1171 andthe second bonding portion 1172 are disposed may be increased. Thus,according to the embodiment, because the amount of the light emitted inthe six-surfaced directions of the light emitting device 1100 isincreased, the light extraction efficiency may be improved and the lightintensity Po may be increased.

In addition, when viewed from the top of the light emitting device, thesum of the areas of the first bonding portion 1171 and the secondbonding portion 1172 is equal to or greater than 30% of the total areaof the light emitting device 1100.

Accordingly, the sum of the areas of the first bonding portion 1171 andthe second bonding portion 1172 is equal to or greater than 30% of thetotal area of the light emitting device 1100, so that a stable mount maybe performed through the first bonding portion 1171 and the secondbonding portion 1172, and electrical characteristics of the lightemitting device 1100 may be ensured.

The sum of the areas of the first bonding portion 1171 and the secondbonding portion 1172 may be selected as 30% to 60% with respect to thetotal area of the light emitting device 1100 in consideration ofensuring the light extraction efficiency and the bonding stability.

In other words, when the sum of the areas of the first bonding portion1171 and the second bonding portion 1172 is 30% to 100% with respect tothe total area of the light emitting device 1100, the electricalcharacteristics of the light emitting device 1100 may be ensured andbonding strength to be mounted on the light emitting device package maybe ensured, so that stable mount may be performed.

In addition, when the sum of the areas of the first bonding portion 1171and the second bonding portion 1172 is more than 0% and equal to or lessthan 60% of the total area of the light emitting device 1100, the amountof light emitted to the surface on which the first bonding portion 1171and the second bonding portion 1172 are disposed increases, so that thelight extraction efficiency of the light emitting device 1100 may beimproved and the light intensity Po may be increased.

In the embodiment, the sum of the areas of the first bonding portion1171 and the second bonding portion 1172 is selected as 30% to 60% ofthe total area of the light emitting device 1100 so as to ensure theelectrical characteristics of the light emitting device 1100 and thebonding strength to be mounted on the light emitting device package andincrease the light intensity.

In addition, according to the light emitting device 1100 of theembodiment, the third reflective layer 1163 may be disposed between thefirst bonding portion 1171 and the second bonding portion 1172. Forexample, the length W5 of the third reflective layer 1163 in major axialdirection of the light emitting device 1100 may correspond to thedistance between the first bonding portion 1171 and the second bondingportion 1172. In addition, for example, the area of the third reflectivelayer 1163 may be 10% to 25% of the entire upper surface of the lightemitting device 1100.

When the area of the third reflective layer 1163 is 10% or more of theentire upper surface of the light emitting device 1100, the package bodydisposed under the light emitting device may be prevented from beingdiscolored or cracked. When being 25% or less, it is advantageous toensure the light extraction efficiency for emitting light to sixsurfaces of the light emitting device.

In addition, without limited thereto in another embodiment, the area ofthe third reflective layer 1163 may be arranged to more than 0% and lessthan 10% of the entire upper surface of the light emitting device 1100to ensure the light extraction efficiency more, and the area of thethird reflective layer 1163 may be arranged to more than 25% and lessthan 100% of the entire upper surface of the light emitting device 1100to prevent the package body from being discolored or cracked.

In addition, the light generated from the light emitting structure 1110may be transmitted and emitted through a second region provided betweena side surface arranged in the major axial direction and the firstbonding portion 1171 or the second bonding portion 1172 adjacent to theside surface.

In addition, the light generated from the light emitting structure 1110may be transmitted and emitted through a third region provided between aside surface arranged in a minor axial direction and the first bondingportion 1171 or the second bonding portion 1172 adjacent to the sidesurface.

According to the embodiment, the size of the first reflective layer 1161may be several micrometers larger than the size of the first bondingportion 1171. For example, the area of the first reflective layer 1161may be provided in a size to completely cover the area of the firstbonding portion 1171. In consideration of a process error, for example,the length of one side of the first reflective layer 1161 may be greaterthan the length of one side of the first bonding portion 1171 by about 4micrometers to about 10 micrometers.

In addition, the size of the second reflective layer 1162 may be severalmicrometers larger than the size of the second bonding portion 1172. Forexample, the area of the second reflective layer 1162 may be provided ina size to completely cover the area of the second bonding portion 1172.In consideration of a process error, for example, the length of one sideof the second reflective layer 1162 may be greater than the length ofone side of the second bonding portion 1172 by about 4 micrometers toabout 10 micrometers.

According to the embodiment, light emitted from the light emittingstructure 1110 may be reflected without being incident on the firstbonding portion 1171 and the second bonding portion 1172 by the firstreflective layer 1161 and the second reflective layer 1162. Thus,according to the embodiment, a loss of the light generated and emittedfrom the light emitting structure 1110 and incident to the first bondingportion 1171 and the second bonding portion 1172 may be minimized.

In addition, according to the light emitting device 1100 of theembodiment, because the third reflective layer 1163 is disposed betweenthe first bonding portion 1171 and the second bonding portion 1172, theamount of light emitted between the first bonding portion 1171 and thesecond bonding portion 1172 may be adjusted.

As described above, the light emitting device 1100 according to theembodiment may be provided as a light emitting device package afterbeing mounted, for example, in a flip chip bonding scheme. Herein, whenthe package body mounted thereon with the light emitting device 1100 isprovided with resin or the like, the package body is discolored orcracked in the lower region of the light emitting device 1100 due tostrong short-wavelength light emitted from the light emitting device1100.

However, according to the light emitting device 1100 of the embodiment,because the amount of light emitted between the region on which thefirst bonding portion 1171 and the second bonding portion 1172 aredisposed is adjusted, the package body disposed in the lower region ofthe light emitting device 1100 may be prevented from being discolored orcracked.

According to the embodiment, the light generated from the light emittingstructure 1100 may be transmitted and emitted through 20% or more of thearea of the upper surface of the light emitting device 1100 on which thefirst bonding portion 1171, the second bonding portion 1172 and thethird reflective layer 1163.

Thus, according to the embodiment, because the amount of the lightemitted in the six-surfaced directions of the light emitting device 1100is increased, the light extraction efficiency may be improved and thelight intensity Po may be increased. In addition, the package bodydisposed adjacent to the lower surface of the light emitting device 1100may be prevented from being discolored or cracked.

In addition, according to the light emitting device 1100 of theembodiment, a plurality of contact holes C1, C2, and C3 may be providedin the transparent electrode layer 1130. The second conductivesemiconductor layer 1113 may be bonded to the reflective layer 1160through the plurality of contact holes C1, C2, and C3 provided in thetransparent electrode layer 1130. The reflective layer 1160 makesdirectly contact with the second conductive semiconductor layer 1113, sothat the adhesive strength may be improved as compared with the casethat the reflective layer 1160 makes contact with the transparentelectrode layer 1130.

When the reflective layer 1160 makes direct contact with only thetransparent electrode layer 1130, the bonding strength or adhesivestrength between the reflective layer 1160 and the transparent electrodelayer 1130 may be weakened. For example, when an insulating layer isbonded to a metal layer, the bonding strength or adhesive strengthbetween the materials thereof may be weakened.

For example, when the bonding strength or adhesive strength between thereflective layer 1160 and the transparent electrode layer 1130 is weak,peeling may incur between the two layers. Thus, when the peeling incursbetween the reflective layer 1160 and the transparent electrode layer1130, the characteristics of the light emitting device 1100 maydeteriorate and the reliability of the light emitting device 1100 maynot be ensured.

However, according to the embodiment, because the reflective layer 1160can make direct contact with the second conductive semiconductor layer1113, the bonding strength and adhesive strength may be stably providedbetween the reflective layer 1160, the transparent electrode layer 1130,and the second conductive semiconductor layer 1113.

Thus, according to the embodiment, because the bonding strength betweenthe reflective layer 1160 and the second conductive semiconductor layer1113 may be stably provided, the reflective layer 1160 may be preventedfrom being peeled off from the transparent electrode layer 1130. Inaddition, because the bonding strength between the reflective layer 1160and the second conductive semiconductor layer 1113 may be stablyprovided, the reliability of the light emitting device 1100 may beimproved.

Meanwhile, as described above, the transparent electrode layer 1130 maybe provided with the contact holes C1, C2, and C3. The light emittedfrom the active layer 1112 may be incident to and reflected by thereflective layer 1160 through the contact holes C1, C2, and C3 providedin the transparent electrode layer 1130. Accordingly, the loss of thelight generated from the active layer 1112 and incident to thetransparent electrode layer 1130 is reduced, so that the lightextraction efficiency may be improved. Thus, according to the lightemitting device 1100 of the embodiment, the light intensity may beimproved.

As described above, according to the semiconductor device package andthe method of manufacturing a semiconductor device package of anembodiment, the bonding portions of the light emitting device 120 of theembodiment may be receive by driving power supplied through theconducive layer which is disposed at the opening. In addition, themelting point of the conductive layer disposed in the opening may beselected to have a higher value than the melting point of a conventionalbonding material. Therefore, even when the light emitting device package100 according to an embodiment is bonded to a main substrate through areflow process, since re-melting phenomenon does not occur, theelectrical connection and physical bonding force are not deteriorated.

In addition, according to the light emitting device package 100 of anembodiment, the package body 110 does not need to be exposed to a hightemperature in the process of manufacturing a light emitting devicepackage. Therefore, according to the embodiment, the package body may beprevented from being exposed to high temperatures to be damaged ordiscolored. Accordingly, the selection range for the materialconstituting the body 115 may be widened. According to an embodiment,the body may be provided by using a relatively inexpensive resinmaterial as well as an expensive material such as ceramic.

Meanwhile, the light emitting device package according to an embodimentmay be applied to a light source unit.

In addition, the light source unit may include a display device, alighting device, a head lamp, and the like according to an industrialfield. As an example of the light source unit, a display device mayinclude a bottom cover, a reflector disposed on the bottom cover, alight emitting module including a light emitting device that emitslight, a light guide plate disposed in front of the reflector andguiding light emitted from the light emitting module forward, an opticalsheet including prism sheets disposed in front of the light guide plate,a display panel disposed in front of the optical sheet, an image signaloutput circuit connected to the display panel to supply an image signalto the display panel, and a color filter disposed in front of thedisplay panel. In this case, the bottom cover, the reflector, the lightemitting module, the light guide plate, and the optical sheet mayconstitute a backlight unit. In addition, the display device may have astructure in which light emitting devices that emit red, green and bluelight are disposed, respectively.

As still another example of the light source unit, the head lamp mayinclude a light emitting module including a light emitting devicepackage disposed on a substrate, a reflector for reflecting lightemitted from the light emitting module in a predetermined direction, forexample, forward, a lens for refracting light reflected by the reflectorforward, and a shade for constructing a light distribution patterndesired by designer by blocking or reflecting a portion of the lightthat is reflected by the reflector to be directed to the lens.

As another example of the light source unit, the lighting device mayinclude a cover, a light source module, a heat radiator, a power supply,an inner case, and a socket. In addition, the light source unitaccording to an embodiment may further include at least one of a memberand a holder. The light source module may include a light emittingdevice package according to an embodiment.

Features, structures, effects, etc. described in the above embodimentsare included in at least one embodiment, but are not necessarily limitedto one embodiment. Furthermore, the features, structures, effects, andthe like shown in the embodiments may be combined or modified withrespect to other embodiments by those skilled in the art to which theembodiments belong. Therefore, it should be interpreted that thecontents related to such a combination and modification are included inthe scope of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. For example, each component specifically shown in theembodiment may be modified. And differences related to suchmodifications and applications will have to be construed as beingincluded in the scope of the embodiments set forth in the appendedclaims.

What is claimed is:
 1. A light emitting device package comprising: firstand second frames spaced apart from each other; a body disposed betweenthe first and second frames and including a cavity having a sidesurface; and a light emitting device disposed in the cavity, wherein theside surface of the cavity includes a first side portion spaced from thelight emitting device and disposed around the light emitting device, agroove portion disposed around the first side portion, and a second sideportion disposed around the groove portion.
 2. The light emitting devicepackage of claim 1, wherein a bottom surface of the groove portionincludes a first region in which a portion of the first frame isexposed.
 3. The light emitting device package of claim 2, wherein aprotection device is disposed in the first region.
 4. The light emittingdevice package of claim 1, wherein the light emitting device includes afirst bonding portion and a second bonding portion disposed on the firstand second frames, the first frame includes a first flat portion facingthe first bonding portion and a first upper recess around the first flatportion, and the second frame includes a second flat portion facing thesecond bonding portion and a second upper recess around the second flatportion.
 5. The light emitting device package of claim 4, wherein anupper surface area of the first flat portion or an upper surface area ofthe second flat portion is 20% to 45% of an area of a lower surface ofthe light emitting device.
 6. The light emitting device package of claim4, wherein the first side portion includes a bottom portion extending inan outward direction of the light emitting device on the first andsecond upper recesses, and a first resin is disposed on the bottomportion of the first side portion.
 7. The light emitting device packageof claim 4, wherein the first side portion is continuously connectedalong the first and second upper recesses, the groove portion comprisesa second resin having a reflective material, and the second resin iscontinuously connected to an outer periphery of the first side portion.8. The light emitting device package of claim 4, wherein the first frameincludes a second region facing a side surface of the first region, thefirst and second regions are disposed at both sides of the first upperrecess, the second frame includes third and fourth regions disposed onboth sides of the second upper recess and facing each other, aprotection device disposed on the first region is connected to the thirdregion by a wire, and the first region and the third region arecorresponded to each other.
 9. The light emitting device package ofclaim 4, wherein a thickness of a region disposed between the first andsecond upper recesses is thinner than a thickness of a region disposedbetween the first and second flat portions.
 10. The light emittingdevice package of claim 1, wherein the first side portion is inclined ata first inclination and the second side portion is inclined at a secondinclination different than the first inclination.
 11. The light emittingdevice package of claim 10, wherein an angle of the first inclination isgreater than an angle of the second inclination.
 12. The light emittingdevice package of claim 1, wherein the first side portion includes astepped portion protruding underneath the light emitting device.
 13. Thelight emitting device package of claim 12, wherein a bottom of thestepped portion is disposed lower than a lower surface of the lightemitting device.
 14. The light emitting device package of claim 1,wherein the first side portion is disposed along a lower periphery ofthe light emitting device, and an upper surface of the first sideportion is disposed as an inclined surface on a lower outer side of thelight emitting device.
 15. The light emitting device package of claim 1,wherein a height of the first side portion extends above a lower surfaceof the light emitting device, and the first side portion has aninclination inclining with respect to a side surface of the lightemitting device to reflect light from the side surface of the lightemitting device upwards and out of the cavity.
 16. The light emittingdevice package of claim 1, wherein a distance from the light emittingdevice to the first side portion gradually increases as a height of thefirst side portion increases.
 17. The light emitting device package ofclaim 7, wherein a height of an upper surface of the second resin ishigher than a height of an upper surface of the first side portion. 18.The light emitting device package of claim 4, wherein the body includesa recess or a through hole, and a first resin is disposed in the recessor the through hole.
 19. The light emitting device package of claim 18,wherein the first resin is in contact with the light emitting device andside surfaces of the first and second bonding portions.
 20. The lightemitting device package of claim 4, wherein a depth of the first upperrecess is 40% to 60% of a thickness of the first flat portion, and adepth of the second upper recess is 40% to 60% of a thickness of thesecond flat portion.